Andrian V. Kuchuk, А.В. Кучук, А. Кучук, A.V. Kuchuk
Andrian V. Kuchuk, А.В. Кучук, А. Кучук, A.V. Kuchuk
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USA
Verified email at uark.edu
Title
Cited by
Cited by
Year
Low-temperature method for thermochromic high ordered VO2 phase formation
V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk
Materials Letters 68, 215-217, 2012
662012
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 1-9, 2012
402012
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017
382017
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Microelectronic Engineering 85 (10), 2142-2145, 2008
372008
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
37*2008
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide
A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ...
Journal of Physics: Conference Series 100 (4), 042003, 2008
372008
Ni-based ohmic contacts to n-type 4H-SiC: the formation mechanism and thermal stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ...
Advances in Condensed Matter Physics 2016, 2016
322016
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ...
Semiconductors 45 (2), 253-259, 2011
29*2011
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 2013
272013
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Materials Science and Engineering: B 165 (1-2), 38-41, 2009
252009
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate
H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ...
Nanoscale research letters 10 (1), 1-5, 2015
242015
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ...
Applied physics letters 95 (3), 031907, 2009
212009
Problemy diahnostyky real'nykh napivprovidnykovykh krystaliv (Problems of Real Semiconductor Crystals Diagnostics)
PI Barans' kyy, OY Byelyayev, GP Gaidar, VP Klad'ko, AV Kuchuk
Naukova dumka, Kyiv, 2014
202014
Amorphous Ta–Si–N diffusion barriers on GaAs
A Kuchuk, E Kaminska, A Piotrowska, K Golaszewska, E Dynowska, ...
Thin Solid Films 459 (1-2), 292-296, 2004
202004
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 025104, 2018
192018
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ...
ACS applied materials & interfaces 7 (41), 23320-23327, 2015
192015
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing
Y Goltvyanskyi, I Khatsevych, A Kuchuk, V Kladko, V Melnik, P Lytvyn, ...
Thin Solid Films 564, 179-185, 2014
192014
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
AV Kuchuk, VP Kladko, TL Petrenko, VP Bryksa, AE Belyaev, YI Mazur, ...
Nanotechnology 25 (24), 245602, 2014
192014
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45 (12), 6265-6272, 2016
182016
Nanostructured Y‐doped ZrO2 powder: peculiarities of light emission under electron beam excitation
N Korsunska, V Papusha, O Kolomys, V Strelchuk, A Kuchuk, V Kladko, ...
physica status solidi (c) 11 (9‐10), 1417-1422, 2014
162014
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