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Zhongxun Guo
Zhongxun Guo
Department of Physics , Fudan University
Verified email at fudan.edu.cn
Title
Cited by
Cited by
Year
Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4
Y Deng, Y Yu, MZ Shi, Z Guo, Z Xu, J Wang, XH Chen, Y Zhang
Science 367 (6480), 895-900, 2020
12042020
Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application
H Xu, H Zhang, Y Liu, S Zhang, Y Sun, Z Guo, Y Sheng, X Wang, C Luo, ...
Advanced Functional Materials 29 (4), 1805614, 2019
1192019
High‐Performance Wafer‐Scale MoS2 Transistors toward Practical Application
H Xu, H Zhang, Z Guo, Y Shan, S Wu, J Wang, W Hu, H Liu, Z Sun, C Luo, ...
Small 14 (48), 1803465, 2018
1072018
Progress of large‐scale synthesis and electronic device application of two‐dimensional transition metal dichalcogenides
X Song, Z Guo, Q Zhang, P Zhou, W Bao, DW Zhang
Small 13 (35), 1700098, 2017
692017
Independent band modulation in 2D van der Waals heterostructures via a novel device architecture
Z Guo, Y Chen, H Zhang, J Wang, W Hu, S Ding, DW Zhang, P Zhou, ...
Advanced Science 5 (9), 1800237, 2018
382018
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
F Liao, Z Guo, Y Wang, Y Xie, S Zhang, Y Sheng, H Tang, Z Xu, A Riaud, ...
ACS Applied Electronic Materials 2 (1), 111-119, 2019
312019
MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection
J Deng, L Zong, M Zhu, F Liao, Y Xie, Z Guo, J Liu, B Lu, J Wang, W Hu, ...
Advanced Functional Materials 29 (46), 1906242, 2019
242019
MoS2 dual-gate transistors with electrostatically doped contacts
F Liao, Y Sheng, Z Guo, H Tang, Y Wang, L Zong, X Chen, A Riaud, J Zhu, ...
Nano Research 12, 2515-2519, 2019
242019
MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection
J Deng, Z Guo, Y Zhang, X Cao, S Zhang, Y Sheng, H Xu, W Bao, J Wan
IEEE Electron Device Letters 40 (3), 423-426, 2019
242019
Ultra-sensitive graphene photodetector with plasmonic structure
Y Su, Z Guo, W Huang, Z Liu, T Gong, Y He, B Yu
Applied Physics Letters 109 (17), 2016
242016
Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Y Sheng, X Chen, F Liao, Y Wang, J Ma, J Deng, Z Guo, S Bu, H Shen, ...
Advanced Electronic Materials 7 (7), 2000395, 2021
202021
Layer-by-layer AB-stacked bilayer graphene growth through an asymmetric oxygen gateway
B Liu, Y Sheng, S Huang, Z Guo, K Ba, H Yan, W Bao, Z Sun
Chemistry of Materials 31 (16), 6105-6109, 2019
172019
Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS2 devices
W Zan, Q Zhang, H Xu, F Liao, Z Guo, J Deng, J Wan, H Zhu, L Chen, ...
Nano Research 11, 3739-3745, 2018
112018
Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes
E Song, Z Guo, G Li, F Liao, G Li, H Du, OG Schmidt, M Kim, Y Yi, W Bao, ...
Advanced Electronic Materials 5 (7), 1900232, 2019
92019
Charge transport and quantum confinement in MoS2 dual-gated transistors
F Liao, H Wang, X Guo, Z Guo, L Tong, A Riaud, Y Sheng, L Chen, Q Sun, ...
Journal of Semiconductors 41 (7), 072904, 2020
72020
Integration of MoS2 with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands
J Deng, L Zong, W Bao, M Zhu, F Liao, Z Guo, Y Xie, B Lu, J Wan, J Zhu, ...
Advanced Optical Materials 7 (23), 1901039, 2019
62019
Recent progress in two-dimensional transition metal dichalcogenides: Material synthesis for microelectronics
XU Hu, L FuYou, GUO ZhongXun, GUO XiaoJiao, Z Peng, ...
Chinese Science Bulletin 62 (36), 4237-4255, 2017
32017
Novel photodetectors and image sensors based on silicon-on-insulator substrate
J Wan, WZ Bao, JN Deng, J Liu, M Arsalan, ZX Guo, XY Cao
2019 International Conference on IC Design and Technology (ICICDT), 1-2, 2019
22019
ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum
J Wan, WZ Bao, JN Deng, ZX Guo, XY Cao, BR Lu, YF Chen, A Zaslavsky, ...
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
12018
Emergent quantum Hall ground states driven by proximity exchange coupling in 2D material/ferromagnet interfaces
D Suri, A Saydjari, L Zhong, S Omar, Z Guo, M Gray, M Rocci, K Burch, ...
Bulletin of the American Physical Society 65, 2020
2020
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