Christopher A. Broderick
Christopher A. Broderick
Staff Researcher (Senior Researcher) -Tyndall National Institute, University College Cork
Verified email at ucc.ie - Homepage
Title
Cited by
Cited by
Year
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
M Usman, CA Broderick, A Lindsay, EP O’Reilly
Physical Review B 84 (24), 245202, 2011
2212011
Band engineering in dilute nitride and bismide semiconductor lasers
CA Broderick, M Usman, SJ Sweeney, EP O’Reilly
Semiconductor Science and Technology 27 (9), 094011, 2012
1722012
Impact of alloy disorder on the band structure of compressively strained GaBiAs
M Usman, CA Broderick, Z Batool, K Hild, TJC Hosea, SJ Sweeney, ...
Physical Review B 87 (11), 115104, 2013
842013
Derivation of 12-and 14-band k.p Hamiltonians for dilute bismide and bismide-nitride semiconductors
CA Broderick, M Usman, EP O'Reilly
Semiconductor Science and Technology 28 (12), 125025, 2013
762013
Optical gain in GaAsBi/GaAs quantum well diode lasers
IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ...
Scientific Reports 6, 28863, 2016
632016
Chapter 2: Mid-infrared light-emitting diodes
A Krier, E Repiso, F Al-Saymari, PJ Carrington, ARJ Marshall, L Qi, ...
Mid-infrared Optoelectronics, 59-90, 2020
422020
12‐band k.p model for dilute bismide alloys of (In)GaAs derived from supercell calculations
CA Broderick, M Usman, EP O'Reilly
Physica Status Solidi B 250 (4), 773, 2013
402013
Determination of type-I band offsets in GaBiAs quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations
CA Broderick, PE Harnedy, P Ludewig, ZL Bushell, K Volz, RJ Manning, ...
Semiconductor Science and Technology 30 (9), 094009, 2015
372015
Theory of the electronic and optical properties of dilute bismide quantum well lasers
CA Broderick, PE Harnedy, EP O'Reilly
IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 1503313, 2015
312015
Anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
CA Broderick, S Mazzucato, H Carrère, T Amand, H Makhloufi, A Arnoult, ...
Physical Review B 90 (19), 195301, 2014
292014
GaAsBi/GaNAs type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near-and mid-infrared photonics
CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ...
Scientific Reports 7, 46371, 2017
212017
Comparison of first principles and semi-empirical models of the structural and electronic properties of GeSn alloys
EJ O’Halloran, CA Broderick, DSP Tanner, S Schulz, EP O’Reilly
Optical and Quantum Electronics 51 (9), 1-23, 2019
182019
Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δso> Eg
GMT Chai, CA Broderick, EP O’Reilly, Z Othaman, SR Jin, JP Petropoulos, ...
Semiconductor Science and Technology 30 (9), 094015, 2015
172015
Progress on germanium-tin nanoscale alloys
J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ...
Chemistry of Materials 32 (11), 4383-4408, 2020
142020
Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures
M Usman, CA Broderick, EP O’Reilly
Physical Review Applied 10 (4), 044024, 2018
92018
Giant bowing of the band gap and spin-orbit splitting energy in GaPBi dilute bismide alloys
ZL Bushell, CA Broderick, L Nattermann, R Joseph, JL Keddie, ...
Scientific Reports 9, 6835, 2019
82019
Theory and design of InGaAsBi mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μm on InP substrates
CA Broderick, W Xiong, SJ Sweeney, EP O'Reilly, JM Rorison
Semicond. Sci. Technol. 33, 094007, 2018
82018
Chapter 10: Dilute bismide alloys
CA Broderick, IP Marko, EP O'Reilly, SJ Sweeney
Handbook of Optoelectronic Device Modeling and Simulation 1, 313-362, 2017
8*2017
Chapter 9: Dilute nitride alloys
CA Broderick, M Seifikar, EP O'Reilly, JM Rorison
Handbook of Optoelectronic Device Modeling and Simulation 1, 251-312, 2017
82017
Theory and optimization of 1.3 μm metamorphic quantum well lasers
S Bogusevschi, CA Broderick, EP O Reilly
IEEE Journal of Quantum Electronics 52 (3), 2500111, 2016
8*2016
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