| Status and future of high-power light-emitting diodes for solid-state lighting MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ... Journal of display technology 3 (2), 160-175, 2007 | 2267 | 2007 |
| Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 141101, 2007 | 1305 | 2007 |
| High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001 | 784 | 2001 |
| Highly efficient all‐nitride phosphor‐converted white light emitting diode R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ... physica status solidi (a) 202 (9), 1727-1732, 2005 | 654 | 2005 |
| High-power phosphor-converted light-emitting diodes based on III-nitrides R Mueller-Mach, GO Mueller, MR Krames, T Trottier IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002 | 650 | 2002 |
| High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999 | 624 | 1999 |
| Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 243506, 2007 | 523 | 2007 |
| InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004 | 493 | 2004 |
| Ordered interface texturing for a light emitting device MR Krames, FA Kish Jr US Patent 5,779,924, 1998 | 470 | 1998 |
| Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ... Laser & Photonics Reviews 1 (4), 307-333, 2007 | 424 | 2007 |
| Phosphor-converted light emitting device WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth US Patent 6,642,652, 2003 | 423 | 2003 |
| Luminescent ceramic for a light emitting device GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ... US Patent 7,361,938, 2008 | 422* | 2008 |
| High performance thin-film flip-chip InGaN–GaN light-emitting diodes OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ... Applied Physics Letters 89 (7), 071109, 2006 | 415 | 2006 |
| History of gallium–nitride-based light-emitting diodes for illumination S Nakamura, MR Krames Proceedings of the IEEE 101 (10), 2211-2220, 2013 | 398 | 2013 |
| Carrier distribution in multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 053502, 2008 | 397 | 2008 |
| III-Phospide and III-Arsenide flip chip light-emitting devices MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ... US Patent 6,784,463, 2004 | 381 | 2004 |
| Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth US Patent 6,576,488, 2003 | 347 | 2003 |
| History, development, and applications of high-brightness visible light-emitting diodes RD Dupuis, MR Krames Journal of lightwave technology 26 (9), 1154-1171, 2008 | 333 | 2008 |
| High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002 | 307 | 2002 |
| III-nitride light emitting devices fabricated by substrate removal CC Coman, FA Kish Jr, MR Krames, PS Martin US Patent 6,800,500, 2004 | 284 | 2004 |
Jonathan J. Wierer, Jr.NC State University, Department of Electrical and Computer EngineeringVerified email at ncsu.edu
