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DOUARA Abdelmalek
DOUARA Abdelmalek
université djillali liabes sidi belabbes
Verified email at univ-sba.dz
Title
Cited by
Cited by
Year
Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer
A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ...
Superlattices and Microstructures 146, 106665, 2020
352020
Optimal estimation of Schottky diode parameters using advanced swarm intelligence algorithms
A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ...
Semiconductors 54, 1398-1405, 2020
62020
Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
A Douara, B Djellouli, H Abid, A Rabehi, A Ziane, M Mostefaoui, ...
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019
62019
IV Characteristics Model for AlGaN/GaN HEMTs Using Tcad-Silvaco
A Douara, B Djellouli, A Rabehi, A Ziane, N Belkadi
Journal of New Technology and Materials 4 (2), 16-24, 2014
52014
2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer
A Douara, A Rabehi, B Djellouli, A Ziane, H Abid
International Journal of Ambient Energy 42 (12), 1363-1366, 2021
32021
Frequency dependent capacitance and conductance–voltage characteristics of nitride GaAs Schottky diode
A Ziane, M Amrani, A Rabehi, A Douara, M Mostefaoui, A Necaibia, ...
Semiconductors 55, 51-55, 2021
32021
Design and Implementation of a Medical TeleMonitoring System based on IoT
M Hamdani, M Youcefi, A Rabehi, B Nail, A Douara
Engineering, Technology & Applied Science Research 12 (4), 8949-8953, 2022
22022
Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
A Rabehi, B Akkal, M Amrani, S Tizi, Z Benamara, H Helal, A Douara, ...
Semiconductors 55 (4), 446-454, 2021
22021
Capacitance Models of AlGaN/GaN High Electron Mobility Transistors
A Douara, N Kermas, B Djellouli
International Journal of Nuclear and Quantum Engineering 10 (3), 420-423, 2016
22016
Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function
R Abdelaziz, R Abdelhalim, D Abdelmalek, H Hicham, B Oussama, ...
Sumy State University, 2022
12022
Fabrication and characteristics of Hg/n-bulk GaN schottky diode
B Nabil, R Abdelaziz, Z Ouennoughi, A Douara
Leonardo Journal of Sciences 26, 113-123, 2015
12015
IV Characteristics model for AlGaN
A Douara, B Djellouli, A Rabehi, A Ziane, N Belkadic
GaN HEMTs using Tcad-Silvaco 4, 2014
12014
Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization
A Rabehi, A Douara, A Rabehi, H Helal, AM Younsi, M Amrani, IE Abbas, ...
Revista Mexicana de Física 70 (2 Mar-Apr), 021004 1–8-021004 1–8, 2024
2024
Improved electrical characteristics of AlxGa1− xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters
A Douara, A Rabehi, O Baitiche, M Handami
Revista Mexicana de Física 69 (4 Jul-Aug), 041001 1–6-041001 1–6, 2023
2023
Impact of AlN interlayer on the electronic and IV characteristics of In0. 17Al0. 83N/GaN HEMTs devices
A Douara, A Rabehi, O Baitiche
Revista Mexicana de Física 69 (3 May-Jun), 031602 1–6-031602 1–6, 2023
2023
Impact of AlN interlayer on the electronic and IV characteristics of In_ (0.17) Al_ (0.83) N/GaN HEMTs devices
A Douara, A Rabehi, O Baitiche
Revista Mexicana de Física 69 (3), 18, 2023
2023
Improved electrical characteristics of Al_ (x) Ga_ (1− x) N/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters
A Douara, A Rabehi, O Baitiche, M Hamdani
Revista Mexicana de Física 69 (4), 9, 2023
2023
Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer
A Douara, M Hamdani
International Journal of Advanced Studies in Computer Science and …, 2022
2022
Etude par simulation d’un transistor HEMT à base de AlGaN/GaN.
A DOUARA, B DJELLOULI
2013
Etude par simulation de l’optimisation des HEMT à base de GaN pour les applications en haute fréquences
A DOUARA
Université de Sidi Bel Abbès-Djillali Liabes, 0
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