| Optimization of photomixers and antennas for continuous-wave terahertz emission IS Gregory, C Baker, WR Tribe, IV Bradley, MJ Evans, EH Linfield, ... IEEE Journal of Quantum electronics 41 (5), 717-728, 2005 | 284 | 2005 |
| Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device AM Song, M Missous, P Omling, AR Peaker, L Samuelson, W Seifert Applied Physics Letters 83 (9), 1881-1883, 2003 | 264 | 2003 |
| High resistivity annealed low-temperature GaAs with 100 fs lifetimes IS Gregory, C Baker, WR Tribe, MJ Evans, HE Beere, EH Linfield, ... Applied physics letters 83 (20), 4199-4201, 2003 | 195 | 2003 |
| Continuous-wave terahertz system with a 60 dB dynamic range IS Gregory, WR Tribe, C Baker, BE Cole, MJ Evans, L Spencer, M Pepper, ... Applied Physics Letters 86 (20), 2005 | 141 | 2005 |
| Microwave detection at 110 GHz by nanowires with broken symmetry C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ... Nano Letters 5 (7), 1423-1427, 2005 | 122 | 2005 |
| Submicron sensors of local electric field with single-electron resolution at room temperature II Barbolina, KS Novoselov, SV Morozov, SV Dubonos, M Missous, ... Applied physics letters 88 (1), 2006 | 95 | 2006 |
| Nano-tesla magnetic field magnetometry using an InGaAs–AlGaAs–GaAs 2DEG Hall sensor N Haned, M Missous Sensors and Actuators A: Physical 102 (3), 216-222, 2003 | 92 | 2003 |
| Room-temperature operations of memory devices based on self-assembled InAs quantum dot structures C Balocco, AM Song, M Missous Applied physics letters 85 (24), 5911-5913, 2004 | 91 | 2004 |
| Terahertz pulsed imaging with 1.06 μm laser excitation C Baker, IS Gregory, WR Tribe, IV Bradley, MJ Evans, M Withers, ... Applied physics letters 83 (20), 4113-4115, 2003 | 91 | 2003 |
| Direct demonstration of the ‘virtual gate’mechanism for current collapse in AlGaN/GaN HFETs AM Wells, MJ Uren, RS Balmer, KP Hilton, T Martin, M Missous Solid-state electronics 49 (2), 279-282, 2005 | 86 | 2005 |
| Nonstoichiometry and dopants related phenomena in low temperature GaAs grown by molecular beam epitaxy M Missous, S O’Hagan Journal of applied physics 75 (7), 3396-3401, 1994 | 85 | 1994 |
| Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in Al x Ga 1− x As L Dobaczewski, P Kaczor, M Missous, AR Peaker, Z Żytkiewicz Physical review letters 68 (16), 2508, 1992 | 84 | 1992 |
| Phase sensitive continuous-wave THz imaging using diode lasers IS Gregory, WR Tribe, BE Cole, C Baker, MJ Evans, IV Bradley, ... Electronics Letters 40 (2), 1, 2004 | 83 | 2004 |
| Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular‐beam epitaxy M Missous, EH Rhoderick, KE Singer Journal of applied physics 59 (9), 3189-3195, 1986 | 79 | 1986 |
| All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers C Baker, IS Gregory, MJ Evans, WR Tribe, EH Linfield, M Missous Optics express 13 (23), 9639-9644, 2005 | 76 | 2005 |
| Coexistence of deep levels with optically active InAs quantum dots SW Lin, C Balocco, M Missous, AR Peaker, AM Song Physical Review B 72 (16), 165302, 2005 | 73 | 2005 |
| On the Richardson constant for aluminum/gallium arsenide Schottky diodes M Missous, EH Rhoderick Journal of applied physics 69 (10), 7142-7145, 1991 | 70 | 1991 |
| Under pressure: Control of strain, phonons and bandgap opening in rippled graphene U Monteverde, J Pal, MA Migliorato, M Missous, U Bangert, R Zan, ... Carbon 91, 266-274, 2015 | 65 | 2015 |
| Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes C Baker, IS Gregory, WR Tribe, IV Bradley, MJ Evans, EH Linfield, ... Applied Physics Letters 85 (21), 4965-4967, 2004 | 64 | 2004 |
| Stoichiometric low‐temperature GaAs and AlGaAs: A reflection high‐energy electron‐diffraction study M Missous Journal of applied physics 78 (7), 4467-4471, 1995 | 62 | 1995 |
