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Mohammad Kazemi
Mohammad Kazemi
Verified email at ece.rochester.edu - Homepage
Title
Cited by
Cited by
Year
Compact model for spin–orbit magnetic tunnel junctions
M Kazemi, GE Rowlands, E Ipek, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (2), 848-855, 2016
782016
Adaptive compact magnetic tunnel junction model
M Kazemi, E Ipek, EG Friedman
IEEE Transactions on Electron Devices 61 (11), 3883-3891, 2014
342014
Energy-efficient nonvolatile flip-flop with subnanosecond data backup time for fine-grain power gating
M Kazemi, E Ipek, EG Friedman
IEEE Transactions on Circuits and Systems II: Express Briefs 62 (12), 1154-1158, 2015
252015
All-spin-orbit switching of perpendicular magnetization
M Kazemi, GE Rowlands, S Shi, RA Buhrman, EG Friedman
IEEE Transactions on Electron Devices 63 (11), 4499-4505, 2016
232016
An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials
M Kazemi
Scientific reports 7 (1), 15358, 2017
212017
Resistive memory accelerator
E Friedman, I Richter, X Guo, M Kazemi, K Pas, R Patel, E Ipek, J Liu
US Patent 9,847,125, 2017
182017
Resistive memory accelerator
E Friedman, I Richter, X Guo, M Kazemi, K Pas, R Patel, E Ipek, J Liu
US Patent 10,261,977, 2019
92019
Method of electrical reconfigurability and an electrical reconfigurable logic gate device instrinsically enabled by spin-orbit materials
M Kazemi
US Patent 10,447,277, 2019
72019
On the capacity of the state-dependent cognitive interference channel
M Kazemi, A Vosoughi
2013 IEEE International Symposium on Information Theory, 2044-2048, 2013
62013
On the capacity region of the partially cooperative relay cognitive interference channel
M Kazemi, A Vosoughi
2013 IEEE International Symposium on Information Theory, 2424-2427, 2013
42013
Design rules for scalability in spin-orbit electronics
M Kazemi, MF Bocko
Scientific Reports 9 (1), 13732, 2019
32019
Resistive memory accelerator
E Friedman, I Richter, X Guo, M Kazemi, K Pas, R Patel, E Ipek, J Liu
US Patent App. 15/801,372, 2018
32018
gMRAM: Gain-Cell Magnetoresistive Random Access Memory for High Density Embedded Storage and in-Situ Computing
M Kazemi, MF Bocko
IEEE International Midwest Symposium on Circuits and Systems (MWSCAS), 405 - 408, 2017
32017
Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
M Kazemi, E Ipek, EG Friedman
US Patent 11,004,588, 2021
12021
Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
M Kazemi, E Ipek, EG Friedman
US Patent 10,510,474, 2019
12019
Sliding Alignment Windows for Real-Time Crowd Captioning
M Kazemi, R Lavaee, I Naim, D Gildea
ACL (2), 236-240, 2014
12014
Capacity region and optimum power allocation strategies for fading cognitive relay multiple access channels
M Kazemi, A Vosoughi
2012 50th Annual Allerton Conference on Communication, Control, and …, 2012
12012
Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields
M Kazemi, EG Friedman, E Ipek
US Patent 11,626,229, 2023
2023
Magnetoresistive dynamic random access memory cell
M Kazemi
US Patent App. 16/617,199, 2020
2020
Resistive memory accelerator
E Friedman, I Richter, X Guo, M Kazemi, K Pas, R Patel, E Ipek, J Liu
US Patent 10,297,315, 2019
2019
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