Chee-Keong Tan
Cited by
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Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum wells light-emitting diodes
G Liu, J Zhang, CK Tan, N Tansu
IEEE Photonics Journal 5 (2), 2201011, 2013
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters
CK Tan, J Zhang, XH Li, G Liu, BO Tayo, N Tansu
Journal of Display Technology 9 (4), 272-279, 2013
Electrons and holes get closer
CK Tan, N Tansu
Nature nanotechnology 10 (2), 107-109, 2015
A high-performance ultraviolet solar-blind photodetector based on a β-Ga 2 O 3 Schottky photodiode
Z Liu, X Wang, Y Liu, D Guo, S Li, Z Yan, CK Tan, W Li, P Li, W Tang
Journal of Materials Chemistry C 7 (44), 13920-13929, 2019
Self-Powered Solar-Blind Photodetectors Based on α/β Phase Junction of
DY Guo, K Chen, SL Wang, FM Wu, AP Liu, CR Li, PG Li, CK Tan, ...
Physical Review Applied 13 (2), 024051, 2020
Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition
C Wu, DY Guo, LY Zhang, PG Li, FB Zhang, CK Tan, SL Wang, AP Liu, ...
Applied Physics Letters 116 (7), 072102, 2020
Ultralow wear of gallium nitride
G Zeng, CK Tan, N Tansu, BA Krick
Applied Physics Letters 109 (5), 051602, 2016
InGaN/Dilute-As GaNAs interface quantum well for red emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-6, 2016
Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes
P Zhu, H Zhu, W Qin, BH Dantas, W Sun, CK Tan, N Tansu
Journal of Applied Physics 119 (12), 124305, 2016
Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
CK Tan, W Sun, D Borovac, N Tansu
Scientific Reports 6, 22983, 2016
III-Nitride digital alloy: electronics and optoelectronics properties of the InN/GaN ultra-short period superlattice nanostructures
W Sun, CK Tan, N Tansu
Scientific reports 7 (1), 1-8, 2017
AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics
W Sun, CK Tan, N Tansu
Scientific Reports 7 (1), 1-8, 2017
First-Principle natural band alignment of GaN/dilute-As GaNAs alloy
CK Tan, N Tansu
AIP Advances 5 (1), 017129, 2015
Auger recombination rates in dilute-As GaNAs semiconductor
CK Tan, N Tansu
AIP Advances 5 (5), 057135, 2015
First-Principle Electronic Properties of Dilute-P GaN1− xPx Alloy for Visible Light Emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6, 24412, 2016
Effect of interface roughness on Auger recombination in semiconductor quantum wells
CK Tan, W Sun, JJ Wierer Jr, N Tansu
AIP Advances 7 (3), 035212, 2017
Pathway towards high-efficiency Eu-doped GaN light-emitting diodes
IE Fragkos, CK Tan, V Dierolf, Y Fujiwara, N Tansu
Scientific reports 7 (1), 1-13, 2017
Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes
P Zhu, CK Tan, W Sun, N Tansu
Applied Optics 54 (34), 10299-10303, 2015
Electronic properties of monoclinic (InxGa1-x)2O3 alloys by first-principle
X Liu, CK Tan
AIP Advances 9 (3), 035318, 2019
Ultra-broadband optical gain in III-nitride digital alloys
W Sun, CK Tan, JJ Wierer, N Tansu
Scientific reports 8 (1), 1-7, 2018
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