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Damir Borovac
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Year
InGaN/Dilute-As GaNAs interface quantum well for red emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-6, 2016
352016
Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters
CK Tan, W Sun, D Borovac, N Tansu
Scientific reports 6 (1), 1-7, 2016
312016
First-Principle Electronic Properties of Dilute-P GaN1− xPx Alloy for Visible Light Emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-9, 2016
192016
Dilute-As AlNAs alloy for deep-ultraviolet emitter
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-7, 2016
92016
Band anti-crossing model in dilute-As GaNAs alloys
JC Goodrich, D Borovac, CK Tan, N Tansu
Scientific Reports 9 (1), 1-8, 2019
82019
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ...
Journal of Applied Physics 126 (21), 213106, 2019
72019
Thermal oxidation of AlInN for III-nitride electronic and optoelectronic devices
MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr
ACS Applied Electronic Materials 1 (8), 1367-1371, 2019
72019
Investigations of the optical properties of GaNAs alloys by first-principle
D Borovac, CK Tan, N Tansu
Scientific Reports 7 (1), 1-8, 2017
62017
On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE
D Borovac, W Sun, R Song, JJ Wierer Jr, N Tansu
Journal of Crystal Growth 533, 125469, 2020
52020
First-principle study of the optical properties of dilute-P GaN1− xPx alloys
D Borovac, CK Tan, N Tansu
Scientific Reports 8 (1), 1-9, 2018
52018
Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy
D Borovac, W Sun, MR Peart, R Song, JJ Wierer Jr, N Tansu
Journal of Crystal Growth 548, 125847, 2020
22020
AlInN/GaN diodes for power electronic devices
MR Peart, D Borovac, W Sun, R Song, N Tansu, JJ Wierer
Applied Physics Express 13 (9), 091006, 2020
22020
Electronic properties of dilute-As InGaNAs alloys: A first-principles study
D Borovac, W Sun, CK Tan, N Tansu
Journal of Applied Physics 127 (1), 015103, 2020
22020
GaN biosensor design with localized surface plasmon resonance
Z Henderson, D Borovac, C Sammarco, X Liu, CK Tan
Physics and simulation of optoelectronic devices XXIX 11680, 187-194, 2021
12021
Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN
E Palmese, MR Peart, D Borovac, R Song, N Tansu, JJ Wierer Jr
Journal of Applied Physics 129 (12), 125105, 2021
12021
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
SA Al Muyeed, X Wei, D Borovac, R Song, N Tansu, JJ Wierer Jr
Journal of Crystal Growth 540, 125652, 2020
12020
Experimental studies of delta-InN incorporation in InGaN quantum well for long wavelength emission
IE Fragkos, D Borovac, W Sun, R Song, JJ Wierer, N Tansu
2018 IEEE Photonics Conference (IPC), 1-2, 2018
12018
First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor
D Borovac, CK Tan, N Tansu
AIP Advances 8 (8), 085119, 2018
12018
Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters
W Sun, H Fu, D Borovac, JC Goodrich, CK Tan, N Tansu
IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022
2022
Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission
IE Fragkos, W Sun, D Borovac, R Song, JJ Wierer, N Tansu
IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022
2022
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Articles 1–20