| Gain mechanism in GaN Schottky ultraviolet detectors O Katz, V Garber, B Meyler, G Bahir, J Salzman Applied physics letters 79 (10), 1417-1419, 2001 | 343 | 2001 |
| Ion‐beam‐assisted lift‐off technique for three‐dimensional micromachining of freestanding single‐crystal diamond P Olivero, S Rubanov, P Reichart, BC Gibson, ST Huntington, J Rabeau, ... Advanced Materials 17 (20), 2427-2430, 2005 | 216 | 2005 |
| Yellow luminescence and related deep levels in unintentionally doped GaN films I Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J Salzman Physical Review B 59 (15), 9748, 1999 | 191 | 1999 |
| Properties of carbon-doped GaN H Tang, JB Webb, JA Bardwell, S Raymond, J Salzman, C Uzan-Saguy Applied Physics Letters 78 (6), 757-759, 2001 | 183 | 2001 |
| The anomalous bandgap bowing in GaAsN U Tisch, E Finkman, J Salzman Applied physics letters 81 (3), 463-465, 2002 | 168 | 2002 |
| Dependence of the refractive index of on temperature and composition at elevated temperatures U Tisch, B Meyler, O Katz, E Finkman, J Salzman Journal of Applied Physics 89 (5), 2676-2685, 2001 | 166 | 2001 |
| Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors O Katz, G Bahir, J Salzman Applied physics letters 84 (20), 4092-4094, 2004 | 144 | 2004 |
| Diamond based photonic crystal microcavities S Tomljenovic-Hanic, MJ Steel, CM de Sterke, J Salzman Optics Express 14 (8), 3556-3562, 2006 | 139 | 2006 |
| Characterization of three-dimensional microstructures in single-crystal diamond P Olivero, S Rubanov, P Reichart, BC Gibson, ST Huntington, JR Rabeau, ... Diamond and related materials 15 (10), 1614-1621, 2006 | 122 | 2006 |
| Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility O Katz, A Horn, G Bahir, J Salzman IEEE Transactions on electron devices 50 (10), 2002-2008, 2003 | 114 | 2003 |
| Surface states and surface oxide in GaN layers I Shalish, Y Shapira, L Burstein, J Salzman Journal of Applied Physics 89 (1), 390-395, 2001 | 109 | 2001 |
| Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy S Zamir, B Meyler, J Salzman Applied Physics Letters 78 (3), 288-290, 2001 | 102 | 2001 |
| Interrupted synthetic aperture radar (SAR) J Salzman, D Akamine, R Lefevre, JC Kirk IEEE aerospace and electronic systems magazine 17 (5), 33-39, 2002 | 99 | 2002 |
| Processing of photonic crystal nanocavity for quantum information in diamond I Bayn, B Meyler, A Lahav, J Salzman, R Kalish, BA Fairchild, S Prawer, ... Diamond and related materials 20 (7), 937-943, 2011 | 93 | 2011 |
| Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy S Zamir, B Meyler, J Salzman Journal of crystal growth 243 (3-4), 375-380, 2002 | 91 | 2002 |
| Fabrication and performance of 1.5 μm GaInAsP travelling-wave laser amplifiers with angled facets CE Zah, JS Osinski, C Caneau, SG Menocal, LA Reith, J Salzman, ... Electronics Letters 19 (23), 990-992, 1987 | 87 | 1987 |
| The effect of AlN buffer layer on GaN grown on (1 1 1)-oriented Si substrates by MOCVD S Zamir, B Meyler, E Zolotoyabko, J Salzman Journal of crystal growth 218 (2-4), 181-190, 2000 | 86 | 2000 |
| Self-stabilized nonlinear lateral modes of broad area lasers D Mehuys, R Lang, M Mittelstein, J Salzman, A Yariv IEEE journal of quantum electronics 23 (11), 1909-1920, 1987 | 84 | 1987 |
| Triangular nanobeam photonic cavities in single-crystal diamond I Bayn, B Meyler, J Salzman, R Kalish New Journal of Physics 13 (2), 025018, 2011 | 80 | 2011 |
| Unstable resonator cavity semiconductor lasers J Salzman, T Venkatesan, R Lang, M Mittelstein, A Yariv Applied physics letters 46 (3), 218-220, 1985 | 80 | 1985 |
