| Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 44 | 2015 |
| Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar Solid-State Electronics 91, 44-52, 2014 | 40 | 2014 |
| Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance H Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 60, 47-59, 2013 | 37 | 2013 |
| Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET H Pardeshi, SK Pati, G Raj, N Mohankumar, CK Sarkar Journal of Semiconductors 33 (12), 124001, 2012 | 26 | 2012 |
| Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ... Superlattices and Microstructures 64, 470-482, 2013 | 25 | 2013 |
| Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency HM Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 60, 10-22, 2013 | 24 | 2013 |
| Impact of gate length and barrier thickness on performance of InP/InGaAs based double gate metal–oxide-semiconductor heterostructure field-effect transistor (DG MOS-HFET) SK Pati, H Pardeshi, G Raj, NM Kumar, CK Sarkar Superlattices and Microstructures 55, 8-15, 2013 | 19 | 2013 |
| Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices D Godwinraj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Superlattices and Microstructures 54, 188-203, 2013 | 18 | 2013 |
| Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in III–V heterostructure underlap DG MOSFET H Pardeshi, SK Pati, G Raj, N Mohankumar, CK Sarkar Physica E: Low-dimensional Systems and Nanostructures 46, 61-67, 2012 | 15 | 2012 |
| Comparative assessment of III–V heterostructure and silicon underlap double gate MOSFETs H Pardeshi, G Raj, SK Pati, N Mohankumar, CK Sarkar Semiconductors 46, 1299-1303, 2012 | 14 | 2012 |
| Polymer-iron tungstate-reduced graphene oxide nanocomposites for microwave absorption MS Krishna, S Balaji, GV Raj, PA Pravin, MS Kumar, NK Kothurkar, ... IOP Conference Series: Materials Science and Engineering 577 (1), 012079, 2019 | 8 | 2019 |
| Free radical production during perinatal birth asphyxia S Batra, G Raj, AK Dutta Medical science research 26 (5), 323-325, 1998 | 6 | 1998 |
| Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer G Raj, M Kumar, CK Sarkar World Journal of Condensed Matter Physics 5 (3), 232-243, 2015 | 5 | 2015 |
| A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices G Raj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Journal of Semiconductors 34 (4), 044002, 2013 | 5 | 2013 |
| Impact of high K layer material on Analog/RF performance of forward and reversed Graded channel Gate Stack DG-MOSFETs SK Swain, S Adak, A Dutta, G Raj, CK Sarkar 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 4 | 2016 |
| Performance analysis of gate material engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs S Adak, SK Swain, G Raj, H Rahaman, CK Sarkar 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 3 | 2016 |
| Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region SK Pati, H Pardeshi, G Raj, N Mohankumar, CK Sarkar Journal of Semiconductors 34 (2), 024002, 2013 | 3 | 2013 |
| Coupled ocean–atmosphere summer intraseasonal oscillation over the Bay of Bengal H Rahaman, GN Bharath Raj, M Ravichandran Pure and Applied Geophysics 176, 5415-5429, 2019 | 2 | 2019 |
| Physics based charge and drain current model for AlGaN/GaN HEMT devices G Raj, H Pardeshi, SK Pati, N Mohankumar, CK Sarkar Journal of Electron Devices 14, 1155-1160, 2012 | 2 | 2012 |
| Analytical drain current model for symmetrical gate underlap DGMOSFET SK Pati, H Pardeshi, G Raj, CK Sarkar, A Sarkar, NM Kumar International Journal of Computer Applications 975, 8887, 2012 | 1 | 2012 |
