| Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Y Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ... Applied Physics Letters 98 (1), 2011 | 183 | 2011 |
| Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides S Ren, Y Rong, SA Claussen, RK Schaevitz, TI Kamins, JS Harris, ... IEEE Photonics Technology Letters 24 (6), 461-463, 2011 | 112 | 2011 |
| Quantum-confined Stark effect in Ge/SiGe quantum wells on Si Y Rong, Y Ge, Y Huo, M Fiorentino, MRT Tan, TI Kamins, TJ Ochalski, ... IEEE Journal of selected topics in quantum electronics 16 (1), 85-92, 2009 | 74 | 2009 |
| Selective epitaxial growth of Ge/Si0. 15Ge0. 85 quantum wells on Si substrate using reduced pressure chemical vapor deposition S Ren, Y Rong, TI Kamins, JS Harris, DAB Miller Applied Physics Letters 98 (15), 2011 | 52 | 2011 |
| Simple electroabsorption calculator for designing 1310 nm and 1550 nm modulators using germanium quantum wells RK Schaevitz, EH Edwards, JE Roth, ET Fei, Y Rong, P Wahl, TI Kamins, ... IEEE Journal of Quantum Electronics 48 (2), 187-197, 2011 | 49 | 2011 |
| Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators EH Edwards, RM Audet, ET Fei, SA Claussen, RK Schaevitz, E Tasyurek, ... Optics Express 20 (28), 29164-29173, 2012 | 37 | 2012 |
| Surface-normal Ge/SiGe asymmetric Fabry–Perot optical modulators fabricated on silicon substrates RM Audet, EH Edwards, KC Balram, SA Claussen, RK Schaevitz, ... Journal of lightwave technology 31 (24), 3995-4003, 2013 | 29 | 2013 |
| X-ray diffraction analysis of step-graded InxGa1− xAs buffer layers grown by molecular beam epitaxy H Lin, Y Huo, Y Rong, R Chen, TI Kamins, JS Harris Journal of crystal growth 323 (1), 17-20, 2011 | 23 | 2011 |
| MBE growth of tensile-strained Ge quantum wells and quantum dots Y Huo, H Lin, R Chen, Y Rong, TI Kamins, JS Harris Frontiers of Optoelectronics 5, 112-116, 2012 | 18 | 2012 |
| Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined Stark effect electroabsorption modulator EH Edwards, RM Audet, SA Claussen, RK Schaevitz, E Taşyürek, S Ren, ... IEEE Photonics Society Summer Topicals 2010, 211-212, 2010 | 10 | 2010 |
| High speed optical modulation in Ge quantum wells using quantum confined stark effect Y Rong, Y Huo, ET Fei, M Fiorentino, MRT Tan, T Ochalski, G Huyet, ... Frontiers of Optoelectronics 5, 82-89, 2012 | 8 | 2012 |
| Efficient luminescence in highly tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, M Li, R Chen, TI Kamins, J Vuckovic, ... 2009 6th IEEE International Conference on Group IV Photonics, 265-267, 2009 | 4 | 2009 |
| Ge quantum well resonator modulators EH Edwards, RM Audet, E Fei, G Shambat, RK Schaevitz, Y Rong, ... 8th IEEE International Conference on Group IV Photonics, 80-82, 2011 | 3 | 2011 |
| Integration of germanium quantum well structures on a silicon-on-insulator waveguide platform for optical modulator applications S Ren, Y Rong, TI Kamins, JS Harris, DAB Miller 7th IEEE International Conference on Group IV Photonics, 60-62, 2010 | 3 | 2010 |
| Direct band gap tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, TI Kamins, J Vuckovic, JS Harris Conference on Lasers and Electro-Optics, CPDB7, 2009 | 3 | 2009 |
| Vertically coupled wavelength tunable photo-detector/optoelectronic devices and systems Y Huo, JS Harris Jr, Y Rong, E Fei US Patent App. 13/687,839, 2013 | 2 | 2013 |
| Low power SiGe electroabsorption modulators for optical interconnects ET Fei, EH Edwards, Y Huo, X Chen, SA Claussen, X Liu, Y Rong, ... Integrated Photonics Research, Silicon and Nanophotonics, IM4A. 3, 2012 | 2 | 2012 |
| High speed, low driving voltage vertical cavity germanium-silicon modulators for optical interconnect Y Rong Stanford University, 2010 | 2 | 2010 |
| Simple electroabsorption calculator for germanium quantum well devices RK Schaevitz, EH Edwards, S Ren, DS Ly-Gagnon, RM Audet, Y Rong, ... 8th IEEE International Conference on Group IV Photonics, 139-141, 2011 | 1 | 2011 |
| Simple electroabsorption model for germanium quantum well devices RK Schaevitz, EH Edwards, RM Audet, Y Rong, S Ren, SA Claussen, ... Numerical Simulation of Optoelectronic Devices, 109-110, 2010 | 1 | 2010 |
David A B MillerStanford UniversityVerified email at ee.stanford.edu
