Rik Jos
Rik Jos
Professor i mikroelektronik, Chalmers universitet
Verified email at chalmers.se
Cited by
Cited by
Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
NEB Cowern, KTF Janssen, HFF Jos
Journal of applied physics 68 (12), 6191-6198, 1990
Design of varactor-based tunable matching networks for dynamic load modulation of high power amplifiers
HM Nemati, C Fager, U Gustavsson, R Jos, H Zirath
IEEE Transactions on Microwave Theory and Techniques 57 (5), 1110-1118, 2009
A strong reduction in the density of near-interface traps at the Si O 2∕ 4 H‐Si C interface by sodium enhanced oxidation
F Allerstam, H÷ ”lafsson, G Gudjonsson, D Dochev, E÷ SveinbjŲrnsson, ...
Journal of applied physics 101 (12), 124502, 2007
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ...
IEEE electron device letters 26 (2), 96-98, 2005
Continuous class-E power amplifier modes
M Ozen, R Jos, C Fager
IEEE Transactions on Circuits and Systems II: Express Briefs 59 (11), 731-735, 2012
Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
V Desmaris, M Rudzinski, N Rorsman, PR Hageman, PK Larsen, H Zirath, ...
IEEE Transactions on electron devices 53 (9), 2413-2417, 2006
High-efficiency RF pulsewidth modulation of class-E power amplifiers
M Ozen, R Jos, CM Andersson, M Acar, C Fager
IEEE Transactions on Microwave Theory and Techniques 59 (11), 2931-2942, 2011
A generalized combiner synthesis technique for class-E outphasing transmitters
M ÷zen, M Van Der Heijden, M Acar, R Jos, C Fager
IEEE Transactions on Circuits and Systems I: Regular Papers 64 (5), 1126-1139, 2017
High field effect mobility in Si face 4H-SiC MOSFET transistors
HO Ólafsson, G Gudjonsson, PA Nilsson, EO Sveinbjörnsson, H Zirath, ...
Electronics Letters 40 (8), 508-510, 2004
Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD
M Rudziński, V Desmaris, PA Van Hal, JL Weyher, PR Hageman, ...
physica status solidi c 3 (6), 2231-2236, 2006
RF power silicon-on-glass VDMOSFETs
N Nenadovic, V Cuoco, SJCH Theeuwen, H Schellevis, G Spierings, ...
IEEE Electron Device Letters 25 (6), 424-426, 2004
Design and characterization of integrated passive elements on high ohmic silicon
E Valletta, J Van Beek, A Den Dekker, N Pulsford, HFF Jos, ...
IEEE MTT-S International Microwave Symposium Digest, 2003 2, 1235-1238, 2003
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
LCN de Vreede, HC de Graaff, JA Willemen, W van Noort, R Jos, ...
IEEE Journal of Solid-State Circuits 34 (9), 1331-1338, 1999
Technology developments driving an evolution of cellular phone power amplifiers to integrated RF front-end modules
R Jos
IEEE Journal of Solid-State Circuits 36 (9), 1382-1389, 2001
Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
F Allerstam, G Gudjonsson, H÷ ”lafsson, E÷ SveinbjŲrnsson, T RŲdle, ...
Semiconductor science and technology 22 (4), 307, 2007
Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
HM Nemati, C Fager, U Gustavsson, R Jos, H Zirath
2008 IEEE MTT-S International Microwave Symposium Digest, 1505-1508, 2008
High channel mobility 4H-SiC MOSFETs
E÷ SveinbjŲrnsson, G Gudjonsson, F Allerstam, H÷ ”lafsson, PŇ Nilsson, ...
Materials science forum 527, 961-966, 2006
Reduction of UHF power transistor distortion with a nonuniform collector doping profile
WD van Noort, LCN de Vreede, HFF Jos, LK Nanver, JW Slotboom
IEEE Journal of Solid-State Circuits 36 (9), 1399-1406, 2001
Role of point defects in the transient diffusion and clustering of implanted boron in silicon
NEB Cowern, HFF Jos, KTF Janssen
Materials Science and Engineering: B 4 (1-4), 101-105, 1989
Novel LDMOS structure for 2 GHz high power basestation application
1998 28th European Microwave Conference 1, 739-744, 1998
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