| Infrared absorption in S i/S i 1− x Ge x/Si quantum wells S Ridene, K Boujdaria, H Bouchriha, G Fishman Physical Review B 64 (8), 085329, 2001 | 87 | 2001 |
| Luttinger-like parameter calculations K Boujdaria, S Ridene, G Fishman Physical Review B 63 (23), 235302, 2001 | 63 | 2001 |
| Band structures of GaAs, InAs, and Ge: A 24-kp model S Ben Radhia, K Boujdaria, S Ridene, H Bouchriha, G Fishman Journal of applied physics 94 (9), 5726-5731, 2003 | 33 | 2003 |
| Band structures of Ge and InAs: A 20 k.p model SB Radhia, S Ridene, K Boujdaria, H Bouchriha, G Fishman Journal of applied physics 92 (8), 4422-4430, 2002 | 27 | 2002 |
| Temperature effect on structural, morphological and optical properties of 2D-MoS2 layers: An experimental and theoretical study Z Jlidi, S Baachaoui, N Raouafi, S Ridene Optik 228, 166166, 2021 | 26 | 2021 |
| Effect of hydrostatic pressure on the hole effective mass in a strained InGaAs/GaAs quantum well S Ridene, H Bouchriha Journal of Physics and Chemistry of Solids 75 (2), 203-211, 2014 | 25 | 2014 |
| Mid-infrared emission in InxGa1− xAs/GaAs T-shaped quantum wire lasers and its indium composition dependence S Ridene Infrared Physics & Technology 89, 218-222, 2018 | 20 | 2018 |
| Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications S Ridene Physics Letters A 381 (38), 3324-3331, 2017 | 20 | 2017 |
| Energy-band structure and optical gain in strained InAs (N)/GaSb/InAs (N) quantum well lasers. S Ridene, M Debbichi, M Said, H Bouchriha Journal of Applied Physics 104 (6), 2008 | 20 | 2008 |
| GaSbBi/GaSb quantum-well and wire laser diodes S Ridene Chemical Physics Letters 702, 44-48, 2018 | 19 | 2018 |
| Large optical gain from the 2D-transition metal dichalcogenides of MoS2/WSe2 quantum wells S Ridene Superlattices and Microstructures 114, 379-385, 2018 | 17 | 2018 |
| Self-consistent optimization of [111]-algainas/inp mqws structures lasing at 1.55 μm by a genetic algorithm H Saidi, M Msahli, RB Dhafer, S Ridene Superlattices and Microstructures 112, 200-209, 2017 | 15 | 2017 |
| High-efficiency of AlInGaN/Al (In) GaN-delta AlGaN quantum wells for deep-ultraviolet emission H Saidi, S Ridene Superlattices and Microstructures 98, 504-514, 2016 | 14 | 2016 |
| Hole intersubband transitions in wurtzite and zinc-blende strained AlGaN/GaN quantum wells and its interband interaction dependence H Saidi, S Ridene, H Bouchriha International Journal of Modern Physics B 29 (08), 1550054, 2015 | 14 | 2015 |
| Tailoring the optical band gap of In–Sn–Zn–O (ITZO) nanostructures with co-doping process on ZnO crystal system: An experimental and theoretical validation N Mastour, K Ramachandran, S Ridene, K Daoudi, M Gaidi The European Physical Journal Plus 137 (10), 1137, 2022 | 13 | 2022 |
| Theoretical investigations of the performance of the active laser region by the calculation of the optical gain RB Dhafer, AB Ahmed, H Saidi, S Ridene, H Bouchriha Optik 127 (3), 1198-1202, 2016 | 13 | 2016 |
| InAsN/GaSb/InAsN ‘W’quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations M Debbichi, AB Fredj, Y Cuminal, JL Lazzari, S Ridene, H Bouchriha, ... Journal of Physics D: Applied Physics 41 (21), 215106, 2008 | 13 | 2008 |
| A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation M Debbichi, S Ridene, H Bouchriha, AB Fredj, M Said, JL Lazzari, ... Semiconductor science and technology 24 (8), 085010, 2009 | 12 | 2009 |
| Symmetrized Hamiltonian versus ‘Foreman’Hamiltonian for semiconductor valence band: an insight K Boujdaria, S Ridene, SB Radhia, H Bouchriha, G Fishman Solid state communications 129 (4), 221-226, 2004 | 12 | 2004 |
| Oscillator strengths for the intersubband transitions in GaAs/InGa1–xAs quantum wells and its strain dependence M Msahli, H Saidi, AB Ahmed, S Ridene, H Bouchriha Optik 127 (11), 4903-4908, 2016 | 11 | 2016 |
DEBBICHI MouradAssociate Professor- University of Monastir- TunisiaVerified email at fsm.rnu.tn
