Charge transport in non-polar and semi-polar III-V nitride heterostructures A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena Semiconductor Science and Technology 27 (2), 024018, 2012 | 45 | 2012 |
On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors RK Jana, GL Snider, D Jena physica status solidi (c) 10 (11), 1469-1472, 2013 | 36 | 2013 |
Stark-effect scattering in rough quantum wells RK Jana, D Jena Applied Physics Letters 99 (1), 2011 | 20 | 2011 |
Sub-60 mV/decade steep transistors with compliant piezoelectric gate barriers RK Jana, A Ajoy, G Snider, D Jena 2014 IEEE International Electron Devices Meeting, 13.6. 1-13.6. 4, 2014 | 13 | 2014 |
Energy-efficient clocking based on resonant switching for low-power computation RK Jana, GL Snider, D Jena IEEE Transactions on Circuits and Systems I: Regular Papers 61 (5), 1400-1408, 2014 | 12 | 2014 |
Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing 72nd Device Research Conference, 27-28, 2014 | 10 | 2014 |
Transistor switches using active piezoelectric gate barriers RK Jana, A Ajoy, G Snider, D Jena IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 8 | 2015 |
Resonant clocking circuits for reversible computation RK Jana, GL Snider, D Jena 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 1-6, 2012 | 6 | 2012 |
A non-hysteretic sub-60-mV/decade subthreshold slope and ON-current boosts in electrostrictive-piezoelectric transistors RK Jana IEEE Electron Device Letters 38 (12), 1759-1762, 2017 | 5 | 2017 |
Electrostrictive tunable capacitors and high-performance 2D crystal transistors for energy-efficient applications RK Jana, GL Snider IEEE Electron Device Letters 37 (3), 341-344, 2016 | 5 | 2016 |
Sub-Boltzmann transistors with piezoelectric gate barriers R Jana, GL Snider, D Jena 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2, 2013 | 4 | 2013 |
A surface-potential based compact model for GaN HEMTs incorporating polarization charges R Jana, D Jena 70th Device Research Conference, 147-148, 2012 | 2 | 2012 |
Low-power electronic devices for energy-efficient applications RK Jana University of Notre Dame, 2015 | | 2015 |
Dipoles in III-V MOSFETs: Scattering and Threshold shifts R Jana, D Jena APS March Meeting Abstracts 2014, J45. 014, 2014 | | 2014 |
Interband absorption in single layer hexagonal boron nitride A Konar, R Jana, T Fang, G Li, W O'Brien, D Jena arXiv preprint arXiv:1109.5145, 2011 | | 2011 |
P‐141: Effect of Modified Scan and Sustain Waveforms on Black Luminance and Address Voltage in an AC Plasma Display Panel RK Jana, SK Dutt SID Symposium Digest of Technical Papers 39 (1), 1737-1741, 2008 | | 2008 |
Current PostDoctoral Scholars octoral Scholars N Ma, A Ajoy, G Li, S Ganguly, P Zhao, R Jana, F Faria, M Islam, A Verma, ... | | |
2015 Index IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Vol. N Agrawal, C Ahn, A Ajoy, J Appenzeller, JA Bain, GI Bourianoff, ... | | |