| Influence of the composition fluctuations and decomposition on the tunable direct gap and oscillator strength of Ge1-xSnx alloys FL Freitas, J Furthmüller, F Bechstedt, M Marques, LK Teles Applied Physics Letters 108 (9), 092101, 2016 | 32 | 2016 |
| First-principles determination of band-to-band electronic transition energies in cubic and hexagonal AlGaInN alloys FL Freitas, M Marques, LK Teles AIP Advances 6 (8), 085308, 2016 | 7 | 2016 |
| Construction of the raising operator for Rosen-Morse eigenstates in terms of the Weyl fractional integral F Freitas arXiv preprint arXiv:1802.06617, 2018 | 1 | 2018 |
| Generalization of Legendre functions applied to Rosen-Morse scattering states FL Freitas arXiv preprint arXiv:2312.15652, 2023 | | 2023 |
| Solution of the Basel problem using the Feynman integral trick FL Freitas arXiv preprint arXiv:2312.04608, 2023 | | 2023 |
| Four-band insulator on a domain wall: an analytically solvable model for the interface between trivial and topological 2D insulators FL Freitas arXiv preprint arXiv:1712.02525, 2017 | | 2017 |
| Non-linear alloying and strain effects on trivial-topological and semimetal-semiconductor transitions in BiSb FL Freitas arXiv preprint arXiv:1711.08667, 2017 | | 2017 |
| Semiconductors for optoelectronic applications: AlGaInN alloys for ultraviolet and GeSn alloys for infrared photoemission FL Freitas Instituto Tecnológico de Aeronáutica, 2015 | | 2015 |
| Accurate bandgap calculations for AlGaInN alloys using the LDA-1/2 method FL Freitas, M Marques, RR Pelá, LK Teles, LG Ferreira Resumo, 2015 | | 2015 |
