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Mark Buckwell
Mark Buckwell
Research Fellow, University College London
Verified email at ucl.ac.uk - Homepage
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Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
3662019
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory
A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ...
Journal of Applied Physics 117 (12), 124505, 2015
972015
Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM
M Buckwell, L Montesi, S Hudziak, A Mehonic, AJ Kenyon
Nanoscale 7 (43), 18030-18035, 2015
632015
Nanoscale transformations in metastable, amorphous, silicon‐rich silica
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7486-7493, 2016
592016
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Microelectronic Engineering 178, 98-103, 2017
572017
Simulation of inference accuracy using realistic RRAM devices
A Mehonic, D Joksas, WH Ng, M Buckwell, AJ Kenyon
Frontiers in neuroscience 13, 593, 2019
472019
Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure
MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Scientific reports 7 (1), 1-7, 2017
442017
Committee machines—A universal method to deal with non-idealities in memristor-based neural networks
D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ...
Nature communications 11 (1), 1-10, 2020
382020
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Y Yang, Y Takahashi, A Tsurumaki-Fukuchi, M Arita, M Moors, M Buckwell, ...
Journal of electroceramics 39 (1), 73-93, 2017
282017
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide
M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ...
physica status solidi (c) 12 (1‐2), 211-217, 2015
252015
Investigation of resistance switching in SiOx RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator
T Sadi, A Mehonic, L Montesi, M Buckwell, A Kenyon, A Asenov
Journal of Physics: Condensed Matter 30 (8), 084005, 2018
242018
Spike-timing dependent plasticity in unipolar silicon oxide RRAM devices
K Zarudnyi, A Mehonic, L Montesi, M Buckwell, S Hudziak, AJ Kenyon
Frontiers in Neuroscience 12, 57, 2018
232018
Nanosecond analog programming of substoichiometric silicon oxide resistive RAM
L Montesi, M Buckwell, K Zarudnyi, L Garnett, S Hudziak, A Mehonic, ...
IEEE Transactions on Nanotechnology 15 (3), 428-434, 2016
182016
On the limits of scalpel AFM for the 3D electrical characterization of nanomaterials
S Chen, L Jiang, M Buckwell, X Jing, Y Ji, E Grustan‐Gutierrez, F Hui, ...
Advanced Functional Materials 28 (52), 1802266, 2018
162018
The interplay between structure and function in redox-based resistance switching
AJ Kenyon, MS Munde, WH Ng, M Buckwell, D Joksas, A Mehonic
Faraday discussions 213, 151-163, 2019
152019
Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica (Adv. Mater. 34/2016)
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7549-7549, 2016
152016
Advanced physical modeling of SiOx resistive random access memories
T Sadi, L Wang, D Gao, A Mehonic, L Montesi, M Buckwell, A Kenyon, ...
2016 International Conference on Simulation of Semiconductor Processes and†…, 2016
132016
High-performance resistance switching memory devices using spin-on silicon oxide
WH Ng, A Mehonic, M Buckwell, L Montesi, AJ Kenyon
IEEE Transactions on Nanotechnology 17 (5), 884-888, 2018
122018
X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices
D Carta, P Guttmann, A Regoutz, A Khiat, A Serb, I Gupta, A Mehonic, ...
Nanotechnology 27 (34), 345705, 2016
122016
In situ transmission electron microscopy of resistive switching in thin silicon oxide layers
M Duchamp, V Migunov, AH Tavabi, A Mehonic, M Buckwell, M Munde, ...
Resolution and discovery 1 (1), 27-33, 2016
102016
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