Steve Hudgens
Steve Hudgens
Adjunct Lecturer Santa Clara University
Verified email at scu.edu
Title
Cited by
Cited by
Year
Electrically erasable phase change memory
SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker
US Patent 5,166,758, 1992
6581992
Overview of phase-change chalcogenide nonvolatile memory technology
S Hudgens, B Johnson
MRS bulletin 29 (11), 829-832, 2004
6122004
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
SR Ovshinsky, W Czubatyj, Q Ye, DA Strand, SJ Hudgens
US Patent 5,296,716, 1994
5491994
Reduced area intersection between electrode and programming element
CH Dennison, GC Wicker, TA Lowrey, SJ Hudgens, C Chiang, D Xu
US Patent 6,673,700, 2004
4272004
Compositionally modified resistive electrode
TA Lowrey, SJ Hudgens, P Klersy
US Patent 6,555,860, 2003
4092003
Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated …
SR Ovshinsky, SJ Hudgens, DA Strand, W Czubatyj, ...
US Patent 5,335,219, 1994
3851994
Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker
US Patent 5,341,328, 1994
3401994
Multiple layer phrase-change memory
SJ Hudgens, TA Lowrey, PJ Klersy
US Patent 6,674,115, 2004
3372004
Plasma deposited coatings, and low temperature plasma method of making same
SJ Hudgens, AG Johncock, SR Ovshinsky, P Nath
US Patent 4,737,379, 1988
3231988
Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated …
SR Ovshinsky, SJ Hudgens, D Strand, W Czubatyj, ...
US Patent 5,596,522, 1997
3181997
Multiple layer phase-change memory
SJ Hudgens, TA Lowrey, PJ Klersy
US Patent 6,507,061, 2003
3102003
Electrically erasable memory elements having improved set resistance stability
SR Ovshinsky, SJ Hudgens, W Czubatyj, DA Strand, GC Wicker
US Patent 5,414,271, 1995
3081995
Scaling analysis of phase-change memory technology
A Pirovano, AL Lacaita, A Benvenuti, F Pellizzer, S Hudgens, R Bez
IEEE International Electron Devices Meeting 2003, 29.6. 1-29.6. 4, 2003
2992003
Electrically programmable memory element with multi-regioned contact
T Lowrey, SJ Hudgens, PJ Klersy
US Patent 6,617,192, 2003
2542003
Modified contact for programmable devices
SJ Hudgens, TA Lowrey
US Patent 6,511,862, 2003
2542003
Thin film electro-optical devices
SR Ovshinsky, RR Johnson, SJ Hudgens, RW Pryor, GC Wicker, ...
US Patent 4,766,471, 1988
2421988
Processing phase change material to improve programming speed
SJ Hudgens, T Lowrey
US Patent 7,893,419, 2011
2412011
Thin film field effect transistor and method of making same
SR Ovshinsky, SJ Hudgens
US Patent 4,769,338, 1988
2351988
Thin film field effect transistor and method of making same
SR Ovshinsky, SJ Hudgens
US Patent 4,843,443, 1989
2081989
Thin film field effect transistor
SR Ovshinsky, SJ Hudgens
US Patent 4,670,763, 1987
1881987
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