| Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JA J. Charles Pravin, D. Nirmal, P. Prajoon Physica E 83 (2016), 95-100, 2016 | 104* | 2016 |
| Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin AEU-International Journal of Electronics and Communications 79, 151-157, 2017 | 76 | 2017 |
| A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance JC Pravin, D Nirmal, P Prajoon, MA Menokey IEEE Transactions on Electron Devices 63 (9), 3782 - 3789, 2016 | 37 | 2016 |
| Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor JA J. Charles Pravin, D. Nirmal, P. Prajoon, N. Mohan Kumar Superlattices and Microstructures 104 (2017), 470-476, 2017 | 35 | 2017 |
| Investigation of breakdown performance in = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications J Ajayan, T Ravichandran, P Prajoon, JC Pravin, D Nirmal Journal of Computational Electronics 17 (1), 265-272, 2018 | 28 | 2018 |
| Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ... AEU-International Journal of Electronics and Communications 84, 387-393, 2018 | 26 | 2018 |
| A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement JCP P. Prajoon, D. Nirmal, M. Anuja Menokey Superlattices and Microstructures 96 (2016), 155-163, 2016 | 19 | 2016 |
| Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique V Sandeep, JC Pravin, AR Babu, P Prajoon IEEE Transactions on Electron Devices 67 (9), 3558-3563, 2020 | 17 | 2020 |
| Nanoscale high-k dielectrics for junctionless nanowire transistor for drain current analysis JC Pravin, P Prajoon, FP Nesamania, G Srikesh, P Senthil Kumar, ... Journal of Electronic Materials 47, 2679-2686, 2018 | 17 | 2018 |
| Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model JCP P. Prajoon, D. Nirmal, M. Anuja Menokey J Comput Electron 15 (2016), 1511-1520, 2016 | 15 | 2016 |
| Lowering the Schottky barrier height by titanium contact for high-drain current in mono-layer MoS2 transistor R Sridevi, J Charles Pravin, A Ramesh Babu, J Ajayan Journal of Electronic Materials 50 (6), 3295-3301, 2021 | 13 | 2021 |
| Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 5 nm SA Kumar, JC Pravin 2019 International Semiconductor Conference (CAS), 89-92, 2019 | 13 | 2019 |
| Efficiency Enhancement of InGaN MQW LED Using Compositionally Step Graded InGaN Barrier on SiC Substrate MAMJCP P. Prajoon, D. Nirmal JOURNAL OF DISPLAY TECHNOLOGY 12 (10), 1117-1121, 2016 | 12 | 2016 |
| Investigation of DC and RF performance of novel MOSHEMT on silicon substrate for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ... Semiconductors 52, 1991-1997, 2018 | 10 | 2018 |
| Performance evaluation of sub 5 nm gaa nwmbcfet using silicon carbide source/drain material S Ashok Kumar, J Charles Pravin IETE Journal of Research 69 (5), 2615-2620, 2023 | 9 | 2023 |
| Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique R Sridevi, JC Pravin, AR Babu, D Nirmal Silicon, 1-7, 2021 | 9 | 2021 |
| Design and simulation of 22nm FinFET structure using TCAD R Kalaivani, JC Pravin, SA Kumar, R Sridevi 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 8 | 2020 |
| Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier P Prajoon, MA Menokey, JC Pravin, J Ajayan, S Rajesh, D Nirmal Superlattices and Microstructures 116, 71-78, 2018 | 8 | 2018 |
| Implementation of charge plasma based dopingless multi bridge channel MOSFET for enhanced performances SA Kumar, JC Pravin, V Sandeep, R Sridevi Physica E: Low-dimensional Systems and Nanostructures 147, 115619, 2023 | 7 | 2023 |
| Analysis of Multi Bridge Channel Undoped Trigate MOSFET by Different High-k Dielectrics for Sub 10 nm SA Kumar, JC Pravin silicon 14 (10), 5535-5543, 2022 | 7 | 2022 |
