Karim Cherkaoui
Karim Cherkaoui
Tyndall National Institute
Verified email at tyndall.ie
Cited by
Cited by
A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0 …
É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 024101, 2011
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
Temperature and frequency dependent electrical characterization of interfaces using capacitance-voltage and conductance methods
É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 102902, 2009
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
Electrical, structural, and chemical properties of films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 064113, 2008
In situ passivation of metal-oxide-semiconductor capacitors with atomic-layer deposited gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902, 2008
Structural and electrical analysis of the atomic layer deposition of capacitors with and without an interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 052904, 2010
Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric
V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, IM Povey, ...
IEEE transactions on electron devices 59 (4), 1084, 2012
Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 212901, 2011
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 144105, 2013
Traps in undoped semi‐insulating InP obtained by high temperature annealing
G Marrakchi, K Cherkaoui, A Karoui, G Hirt, G Müller
Journal of applied physics 79 (9), 6947-6950, 1996
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection
P Fougeres, M Hage-Ali, JM Koebel, P Siffert, S Hassan, A Lusson, ...
Journal of crystal growth 184, 1313-1318, 1998
Electrical analysis of three-stage passivated capacitors with varying thicknesses and incorporating an interface control layer
S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
Impact of H2/N2 annealing on interface defect densities in Si (100)/SiO2/HfO2/TiN gate stacks
M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ...
Microelectronic engineering 80, 70-73, 2005
Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors
RD Long, B Shin, S Monaghan, K Cherkaoui, J Cagnon, S Stemmer, ...
Journal of The Electrochemical Society 158 (5), G103, 2011
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
Influence of deep levels on CdZnTe nuclear detectors
A Zerrai, K Cherkaoui, G Marrakchi, G Bremond, P Fougeres, M Hage-Ali, ...
Journal of crystal growth 197 (3), 646-649, 1999
/Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Depositedfor DRAM Applications
S Monaghan, K Cherkaoui, E O'connor, V Djara, PK Hurley, L Oberbeck, ...
IEEE electron device letters 30 (3), 219-221, 2009
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