Aleksey Andreev
Aleksey Andreev
Senior Scientist, Hitachi Cambridge Laboratory
Verified email at phy.cam.ac.uk
Title
Cited by
Cited by
Year
Theory of the electronic structure of GaN/AlN hexagonal quantum dots
AD Andreev, EP O’reilly
Physical Review B 62 (23), 15851, 2000
4342000
Strain distributions in quantum dots of arbitrary shape
AD Andreev, JR Downes, DA Faux, EP O’reilly
Journal of Applied Physics 86 (1), 297-305, 1999
2841999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002
1962002
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers
S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ...
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003
1642003
Mechanism of suppression of Auger recombination processes in type‐II heterostructures
GG Zegrya, AD Andreev
Applied Physics Letters 67 (18), 2681-2683, 1995
1641995
Calculation of electric field and optical transitions in quantum wells
UME Christmas, AD Andreev, DA Faux
Journal of applied physics 98 (7), 073522, 2005
1602005
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications
M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1362008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots
AD Andreev, EP O’Reilly
Applied Physics Letters 79 (4), 521-523, 2001
1212001
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots
AD Andreev, AA Lipovskii
Physical Review B 59 (23), 15402, 1999
1051999
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ...
Physical Review B 70 (19), 193303, 2004
1032004
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114-211114-3, 2005
1002005
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
DP Williams, AD Andreev, EP O’Reilly, DA Faux
Physical Review B 72 (23), 235318, 2005
822005
Structural analysis of strained quantum dots using nuclear magnetic resonance
EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ...
Nature nanotechnology 7 (10), 646-650, 2012
812012
InSb1− xNx growth and devices
T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ...
Solid-State Electronics 47 (3), 387-394, 2003
792003
Strain distribution in quantum-dot superlattices
E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev
Applied Physics Letters 87 (20), 203112, 2005
752005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003
692003
Optical absorption in PbSe spherical quantum dots embedded in glass matrix
AD Andreev, EV Kolobkova, AA Lipovskii
Journal of Applied Physics 88 (2), 750-757, 2000
502000
Theory of conduction band structure of In N x Sb 1− x and Ga N x Sb 1− x dilute nitride alloys
A Lindsay, EP O’Reilly, AD Andreev, T Ashley
Physical Review B 77 (16), 165205, 2008
472008
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters
AD Andreev, EP OReilly
Applied Physics Letters 87 (21), 213106-213106-3, 2005
462005
Theoretical performance and structure optimization of 3.5–4.5 μm InGaSb/InGaAlSb multiple-quantum-well lasers
AD Andreev, EP O’Reilly, AR Adams, T Ashley
Applied Physics Letters 78 (18), 2640-2642, 2001
362001
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Articles 1–20