Shahriar Memaran
Shahriar Memaran
National High Magnetic Field Laboratory
Verified email at magnet.fsu.edu - Homepage
Title
Cited by
Cited by
Year
Field-Effect Transistors Based on Few-Layered α-MoTe2
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
ACS nano 8 (6), 5911-5920, 2014
3082014
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
Nature 553, 63-67, 2018
2452018
Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities
NR Pradhan, D Rhodes, Y Xin, S Memaran, L Bhaskaran, M Siddiq, S Hill, ...
ACS nano 8 (8), 7923-7929, 2014
1262014
Hall and field-effect mobilities in few layered p-WSe 2 field-effect transistors
NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ...
Scientific reports 5 (1), 1-8, 2015
1152015
Pronounced photovoltaic response from multilayered transition-metal dichalcogenides PN-junctions
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, O Ogunsolu, ...
Nano letters 15 (11), 7532–7538, 2015
672015
Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response
PK Sahoo, S Memaran, FA Nugera, Y Xin, T Díaz Márquez, Z Lu, ...
ACS nano 13 (11), 12372-12384, 2019
372019
ACS Nano 8, 5911 (2014)
NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ...
MathSciNet, 0
13
Phase modulators based on high mobility ambipolar ReSe 2 field-effect transistors
NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ...
Scientific reports 8 (1), 1-10, 2018
112018
Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P
KW Chen, S Das, D Rhodes, S Memaran, T Besara, T Siegrist, ...
Journal of Physics: Condensed Matter 28 (14), 14LT01, 2016
112016
Possible manifestations of the chiral anomaly and evidence for a magnetic field induced topological phase transition in the type-I Weyl semimetal TaAs
QR Zhang, B Zeng, YC Chiu, R Schönemann, S Memaran, W Zheng, ...
Physical Review B 100 (11), 115138, 2019
82019
Sequential Edge-Epitaxy in 2D Lateral Heterostructures
PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez
arXiv preprint arXiv:1706.07014, 2017
32017
Pronounced photovoltaic response from PN-junctions of multi-layered MoSe_2 on h-BN
S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, P Ajayan, ...
arXiv preprint arXiv:1411.2086, 2014
22014
Emission from localized states in few-layer InSe: Experiment
Z Lu, KW Song, D Shcherbakov, Y Jiang, S Memaran, W Zheng, ...
Bulletin of the American Physical Society, 2021
2021
Inverse design of co-functionaity: Discovery of Rashba materials that are also topological insulators and Rashba materials that are also ferroelectrics
C Mera Acosta, A Fazzio, G Dalpian, A Zunger
Bulletin of the American Physical Society, 2021
2021
Layer-and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor
D Shcherbakov, P Stepanov, S Memaran, Y Wang, Y Xin, J Yang, K Wei, ...
Science Advances 7 (5), eabe2892, 2021
2021
Electrical control of neutral and charged excitons in few-layer InSe
Z Lu, D Shcherbakov, Y Jiang, S Memaran, W Zheng, T Taniguchi, ...
Bulletin of the American Physical Society 65, 2020
2020
Energy gaps of low filling factor quantum Hall states in two-dimensional Indium Selenide.
D Shcherbakov, P Stepanov, J Yang, S Memaran, W Zheng, K Watanabe, ...
Bulletin of the American Physical Society 65, 2020
2020
Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides
PK Sahoo, S Memaran, Y Xin, TD Márquez, FA Nugera, Z Lu, W Zheng, ...
arXiv preprint arXiv:1904.00311, 2019
2019
Transport properties of high-mobility InSe in Quantum Hall regime.
D Shcherbakov, P Stepanov, J Yang, S Memaran, W Zheng, K Watanabe, ...
APS March Meeting Abstracts 2019, L45. 002, 2019
2019
Lateral PN Junctions Based on 2-D Materials
S Memaran
2018
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Articles 1–20