Yoshi Okada
Yoshi Okada
Verified email at mbe.rcast.u-tokyo.ac.jp
Title
Cited by
Cited by
Year
Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
R Oshima, A Takata, Y Okada
Applied Physics Letters 93 (8), 083111, 2008
3262008
Intermediate band solar cells: Recent progress and future directions
Y Okada, NJ Ekins-Daukes, T Kita, R Tamaki, M Yoshida, A Pusch, ...
Applied physics reviews 2 (2), 021302, 2015
2992015
Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
Y Okada, T Morioka, K Yoshida, R Oshima, Y Shoji, T Inoue, T Kita
Journal of applied physics 109 (2), 024301, 2011
2422011
Novel materials for high-efficiency III–V multi-junction solar cells
M Yamaguchi, KI Nishimura, T Sasaki, H Suzuki, K Arafune, N Kojima, ...
Solar Energy 82 (2), 173-180, 2008
1742008
Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell
Y Okada, R Oshima, A Takata
Journal of Applied Physics 106 (2), 024306, 2009
1462009
Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP (3 1 1) B substrate
K Akahane, N Ohtani, Y Okada, M Kawabe
Journal of crystal growth 245 (1-2), 31-36, 2002
1432002
Does a magnetic barrier or a magnetic-electric barrier structure possess any spin polarization and spin filtering under zero bias?
HZ Xu, Y Okada
Applied Physics Letters 79 (19), 3119-3121, 2001
1292001
Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O
Y Okada, PJ Tobin, V Lakhotia, WA Feil, SA Ajuria, RI Hegde
Applied physics letters 63 (2), 194-196, 1993
1251993
Furnace grown gate oxynitride using nitric oxide (NO)
Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria
IEEE transactions on electron devices 41 (9), 1608-1613, 1994
1171994
Material challenges for solar cells in the twenty-first century: directions in emerging technologies
S Almosni, A Delamarre, Z Jehl, D Suchet, L Cojocaru, M Giteau, ...
Science and Technology of advanced MaTerialS 19 (1), 336-369, 2018
1102018
Two-photon excitation in an intermediate band solar cell structure
N Ahsan, N Miyashita, M Monirul Islam, K Man Yu, W Walukiewicz, ...
Applied Physics Letters 100 (17), 172111, 2012
1082012
Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic modules
T Sogabe, Y Shoji, M Ohba, K Yoshida, R Tamaki, HF Hong, CH Wu, ...
Scientific reports 4 (1), 1-7, 2014
992014
Highly packed InGaAs quantum dots on GaAs (311) B
K Akahane, T Kawamura, K Okino, H Koyama, S Lan, Y Okada, ...
Applied physics letters 73 (23), 3411-3413, 1998
911998
Process for fabricating a semiconductor device having a high reliability dielectric material
Y Okada, PJ Tobin
US Patent 5,407,870, 1995
911995
Kinetics of growth of conductive filament in As Te Ge glasses
K Tanaka, Y Okada, M Sugi, S Iizima, M Kikuchi
Journal of Non-Crystalline Solids 12 (1), 100-114, 1973
901973
Roadmap on optical energy conversion
SV Boriskina, MA Green, K Catchpole, E Yablonovitch, MC Beard, ...
Journal of Optics 18 (7), 073004, 2016
862016
Heteroepitaxy and characterization of CuInSe2 on GaAs (001)
S Niki, Y Makita, A Yamada, O Hellman, PJ Fons, A Obara, Y Okada, ...
Journal of crystal growth 150, 1201-1205, 1995
741995
Cracking efficiency of hydrogen with tungsten filament in molecular beam epitaxy
A Sutoh, Y Okada, S Ohta, M Kawabe
Japanese journal of applied physics 34 (10B), L1379, 1995
731995
Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
O Takeuchi, M Aoyama, R Oshima, Y Okada, H Oigawa, N Sano, ...
Applied physics letters 85 (15), 3268-3270, 2004
722004
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells
K Toprasertpong, H Fujii, T Thomas, M Führer, D Alonso‐Álvarez, ...
Progress in Photovoltaics: research and applications 24 (4), 533-542, 2016
692016
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