| Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors S Vaziri, M Belete, ED Litta, AD Smith, G Lupina, MC Lemme, M Östling Nanoscale 7 (30), 13096-13104, 2015 | 60 | 2015 |
| Going ballistic: Graphene hot electron transistors S Vaziri, AD Smith, M Östling, G Lupina, J Dabrowski, G Lippert, W Mehr, ... Solid State Communications 224, 64-75, 2015 | 47 | 2015 |
| Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics M Belete, S Kataria, U Koch, M Kruth, C Engelhard, J Mayer, ... ACS applied nano materials 1 (11), 6197-6204, 2018 | 31 | 2018 |
| Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion‐Based Plasticity M Belete, S Kataria, A Turfanda, S Vaziri, T Wahlbrink, O Engström, ... Advanced Electronic Materials 6 (3), 1900892, 2019 | 25 | 2019 |
| Dielectric surface charge engineering for electrostatic doping of graphene S Wittmann, F Aumer, D Wittmann, S Pindl, S Wagner, A Gahoi, E Reato, ... ACS Applied Electronic Materials 2 (5), 1235-1242, 2020 | 16 | 2020 |
| Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors M Belete, O Engström, S Vaziri, G Lippert, M Lukosius, S Kataria, ... ACS Appl. Mater. Interfaces 12 (8), 9656-9663, 2020 | 10 | 2020 |
| Capacitance–Voltage (C–V ) Characterization of Graphene–Silicon Heterojunction Photodiodes S Riazimehr, M Belete, S Kataria, O Engström, MC Lemme Advanced Optical Materials 8 (13), 2000169, 2020 | 8 | 2020 |
| Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes M Belete, S Kataria, S Riazimehr, G Lippert, M Lukosius, D Schneider, ... ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019 | 3 | 2019 |
| Defects in layered vapor-phase grown MOS2 M Belete, S Kataria, O Engström, MC Lemme Device Research Conference (DRC), 2017 75th Annual, 1-2, 2017 | 3 | 2017 |
| Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes L Völkel, D Braun, M Belete, S Kataria, T Wahlbrink, K Ran, K Kistermann, ... Advanced Functional Materials, 2300428, 0 | 3 | |
| Step tunneling-enhanced hot-electron injection in vertical graphene base transistors S Vaziri, M Belete, AD Smith, E Dentoni Litta, G Lupina, MC Lemme, ... Solid State Device Research Conference (ESSDERC), 2015 45th European, 198-201, 2015 | 2 | 2015 |
| Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024) L Völkel, D Braun, M Belete, S Kataria, T Wahlbrink, K Ran, K Kistermann, ... Advanced Functional Materials 34 (15), 2470085, 2024 | | 2024 |
| Silver Nanoparticle-Assisted Electrochemically Exfoliated Graphene Inks Coated on PVA-Based Self-Healing Polymer Composites for Soft Electronics B Şimşek, J Ruhkopf, U Plachetka, N Rademacher, M Belete, ... ACS Applied Materials & Interfaces, 2024 | | 2024 |
| Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes L Völkel, D Braun, M Belete, S Kataria, T Wahlbrink, K Ran, K Kistermann, ... arXiv preprint arXiv:2301.10158, 2023 | | 2023 |
| Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors D Braun, S Lukas, L Völkel, O Hartwig, M Prechtl, M Belete, S Kataria, ... 2022 Device Research Conference (DRC), 1-2, 2022 | | 2022 |
| Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride L Völke, D Braun, M Belete, S Kataria, T Wahlbrink, MC Lemme 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | | 2021 |
| Two dimensional materials-based vertical heterojunction devices for electronics, optoelectronics and neuromorphic applications M Belete Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021, 2021 | | 2021 |
| (Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide M Belete, D Schneider, E Reato, O Engström, Z Wang, T Wahlbrink, ... Electrochemical Society Meeting Abstracts 237, 1297-1297, 2020 | | 2020 |
| Probing Dielectric Properties of Layered MoS2 Synthesized by Vapor-Phase Sulfurization M Belete, S Kataria, O Engström, MC Lemme Graphene Week Conference 2017, 2017 | | 2017 |
| The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitors with HfO2 M Belete Advanced Etch Technology for Nanopatterning II 8685, 86850W, 2013 | | 2013 |
