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J.S. Raj Kumar
J.S. Raj Kumar
Assistant Professor, Karunya Institute of Technology and Sciences
Verified email at karunya.edu.in
Title
Cited by
Cited by
Year
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
432019
Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications
JSR Kumar, D Nirmal, MK Hooda, S Singh, J Ajayan, L Arivazhagan
Silicon, 1-6, 2021
82021
Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect
L Arivazhagan, D Nirmal, J Ajayan, D Godfrey, JS Rakkumar, SB Lakshmi
AIP Conference Proceedings 2201 (1), 2019
52019
AlGaN/GaN HEMT for highly sensitive detection of Bio-molecules using transconductance method
PPK Reddy, SB Lakshmi, L Arivazhgan, JSR Kumar, D Nirmal
IOP conference series: materials science and engineering 872 (1), 012048, 2020
42020
Variable thermal resistance model of GaN-on-SiC with substrate scalability
L Arivazhagan, D Nirmal, S Chander, J Ajayan, D Godfrey, JS Rajkumar, ...
Journal of Computational Electronics 19 (4), 1546-1554, 2020
32020
Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness
L Arivazhagan, AHM Jarndal, S Chander, D Godfrey, RK JS, ...
2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020
32020
DC Performance analysis of AlGaN/GaN HEMT for future High power applications
PP Pandit, L Arivazhagan, P Prajoon, JS Rajkumar, J Ajayan, D Nirmal
2018 4th International Conference on Devices, Circuits and Systems (ICDCS …, 2018
32018
Investigation on LG = 50 nm Tapered T-Gated AlGaN/GaN HEMT on Silicon Wafer with a fT/fmax of 264/312 GHz for beyond 5G (B5G) Applications
JSR Kumar, D Nirmal, J Ajayan, S Tayal
Silicon 14 (17), 11315-11322, 2022
22022
Design and Simulation of a T-gated AlGaN/GaN HEMT with Added Mini Field Plate
JSR Kumar, D Nirmal, HV Du John, SA Franklin, G Samuel
2022 3rd International Conference on Electronics and Sustainable …, 2022
12022
Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation
L Arivazhagan, D Nirmal, J Ajayan, D Godfrey, JS Rajkumar, SB Lakshmi
AIP Conference Proceedings 2201 (1), 2019
12019
DC and RF Analysis of AlGaN/GaN MOS-HEMT for High Power Application
JSR Kumar, D Nirmal, L Arivazhagan, PP Pandit
2019 2nd International Conference on Signal Processing and Communication …, 2019
12019
A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
JSR Kumar, HV Du John, IV BinolaKJebalin, J Ajayan, D Nirmal
Microelectronics Journal, 105951, 2023
2023
Simulation Study of Stacked Oxide Layer NCFET for RF Applications
VS Navya, HV Du John, JSR Kumar, A Franklin, D Nirmal
2023 8th International Conference on Communication and Electronics Systems …, 2023
2023
Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems
SA Franklin, S Chander, JSR Kumar, J Ajayan, D Nirmal
ECS Journal of Solid State Science and Technology 12 (3), 035006, 2023
2023
Investigations of ScAlN/AlGaN split barrier inspired high electron mobility transistor
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