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Jiongjiong Mo
Jiongjiong Mo
post-doc of Electronics Engineering, Lund University
Verified email at eit.lth.se
Title
Cited by
Cited by
Year
Asymmetric InGaAs/InP MOSFETs with source/drain engineering
J Mo, E Lind, LE Wernersson
IEEE electron device letters 35 (5), 515-517, 2014
322014
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
G Roll, J Mo, E Lind, S Johansson, LE Wernersson
Applied Physics Letters 106 (20), 2015
232015
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice
A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ...
The Journal of Physical Chemistry C 124 (11), 6472-6478, 2020
182020
Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ...
Nanotechnology 31 (12), 125604, 2020
182020
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
J Mo, E Lind, G Roll, LE Wernersson
Applied Physics Letters 105 (3), 2014
172014
InP drain engineering in asymmetric InGaAs/InP MOSFETs
J Mo, E Lind, LE Wernersson
IEEE Transactions on Electron Devices 62 (2), 501-506, 2014
142014
A blind calibration model for I/Q imbalances of wideband zero-IF receivers
X Peng, Z Wang, J Mo, C Wang, J Liu, F Yu
Electronics 9 (11), 1868, 2020
122020
A Ka-band low power consumption MMIC core chip for T/R modules
M Zhou, J Mo, Z Wang
AEU-International Journal of Electronics and Communications 91, 37-43, 2018
112018
Design of a broadband Ka-band MMIC LNA using deep negative feedback loop
G Wang, W Chen, J Liu, J Mo, H Chen, Z Wang, F Yu
IEICE Electronics Express 15 (10), 20180317-20180317, 2018
72018
Total ionizing dose effect and single event burnout of VDMOS with different inter layer dielectric and passivation
J Mo, H Chen, L Wang, F Yu
Journal of Electronic Testing 33, 255-259, 2017
72017
A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks
B Hou, H Chen, Z Wang, J Mo, J Chen, F Yu, W Wang
Sensors 17 (2), 223, 2017
72017
A new capacitance-to-frequency converter for on-chip capacitance measurement and calibration in CMOS technology
D Zhu, J Mo, S Xu, Y Shang, Z Wang, Z Huang, F Yu
Journal of Electronic Testing 32, 393-397, 2016
52016
The design and thermal reliability analysis of a high-efficiency K-Band MMIC medium-power amplifier with multiharmonic matching
Y Shang, H Xu, J Mo, Z Wang, X Xu, Z Tu, X Zhang, H Zheng, W Chen, ...
Active and Passive Electronic Components 2016, 2016
52016
Compact wideband dual circularly polarized L‐shaped slot antenna
C Wei, M Zhou, K Ding, FX Yu, JJ Mo, XL Zhao
Microwave and Optical Technology Letters 60 (7), 1685-1691, 2018
42018
Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
J Mo, X Zhao, M Zhou
Active and Passive Electronic Components 2017, 2017
42017
Lattice matched and Pseudomorphic InGaAs MOSHEMT with fT of 200GHz
JJ Mo, N Wichmann, Y Roelens, M Zaknoune, L Desplanque, X Wallart, ...
2012 International Conference on Indium Phosphide and Related Materials, 44-47, 2012
42012
A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor
T Wang, M Zhou, J Liu, Z Wang, J Mo, H Chen, F Yu
IEICE Electronics Express 17 (11), 20200160-20200160, 2020
32020
The Design of Broadband LNA with Active Biasing based on Negative Technique
G Wang, J Liu, S Xu, J Mo, Z Wang, F Yu
Journal of Microelectronics, Electronic Components and Materials 48 (2), 115-120, 2018
32018
4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit
W Chen, Z Wang, H Chen, Z Huang, J Mo
IEICE Electronics Express 14 (18), 20170711-20170711, 2017
32017
Characterization of border traps in III-V MOSFETs using an RF transconductance method
S Johansson, J Mo, E Lind
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
32013
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Articles 1–20