Jiongjiong Mo
Jiongjiong Mo
post-doc of Electronics Engineering, Lund University
Verified email at eit.lth.se
Title
Cited by
Cited by
Year
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
G Roll, J Mo, E Lind, S Johansson, LE Wernersson
Applied Physics Letters 106 (20), 203503, 2015
212015
Asymmetric InGaAs/InP MOSFETs with source/drain engineering
J Mo, E Lind, LE Wernersson
IEEE electron device letters 35 (5), 515-517, 2014
212014
Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
J Mo, E Lind, G Roll, LE Wernersson
Applied Physics Letters 105 (3), 033516, 2014
142014
Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
J Mo, S El Kazzi, W Mortelmans, AN Mehta, S Sergeant, Q Smets, ...
Nanotechnology 31 (12), 125604, 2020
132020
InP drain engineering in asymmetric InGaAs/InP MOSFETs
J Mo, E Lind, LE Wernersson
IEEE Transactions on Electron Devices 62 (2), 501-506, 2014
102014
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice
A Nalin Mehta, J Mo, G Pourtois, A Dabral, B Groven, H Bender, P Favia, ...
The Journal of Physical Chemistry C 124 (11), 6472-6478, 2020
82020
A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks
B Hou, H Chen, Z Wang, J Mo, J Chen, F Yu, W Wang
Sensors 17 (2), 223, 2017
52017
A Ka-band low power consumption MMIC core chip for T/R modules
M Zhou, J Mo, Z Wang
AEU-International Journal of Electronics and Communications 91, 37-43, 2018
42018
Total ionizing dose effect and single event burnout of VDMOS with different inter layer dielectric and passivation
J Mo, H Chen, L Wang, F Yu
Journal of Electronic Testing 33 (2), 255-259, 2017
42017
Lattice matched and Pseudomorphic InGaAs MOSHEMT with fTof 200GHz
JJ Mo, N Wichmann, Y Roelens, M Zaknoune, L Desplanque, X Wallart, ...
2012 International Conference on Indium Phosphide and Related Materials, 44-47, 2012
42012
Compact wideband dual circularly polarized L‐shaped slot antenna
C Wei, M Zhou, K Ding, FX Yu, JJ Mo, XL Zhao
Microwave and Optical Technology Letters 60 (7), 1685-1691, 2018
32018
Design of a broadband Ka-band MMIC LNA using deep negative feedback loop
G Wang, W Chen, J Liu, J Mo, H Chen, Z Wang, F Yu
IEICE Electronics Express 15 (10), 20180317-20180317, 2018
32018
A new capacitance-to-frequency converter for on-chip capacitance measurement and calibration in CMOS technology
D Zhu, J Mo, S Xu, Y Shang, Z Wang, Z Huang, F Yu
Journal of Electronic Testing 32 (3), 393-397, 2016
32016
The design and thermal reliability analysis of a high-efficiency K-band MMIC medium-power amplifier with multiharmonic matching
Y Shang, H Xu, J Mo, Z Wang, X Xu, Z Tu, X Zhang, H Zheng, W Chen, ...
Active and Passive Electronic Components 2016, 2016
32016
Characterization of border traps in III-V MOSFETs using an RF transconductance method
S Johansson, J Mo, E Lind
2013 Proceedings of the European Solid-State Device Research Conference …, 2013
32013
The Design of Broadband LNA with Active Biasing based on Negative Technique
G Wang, J Liu, S Xu, J Mo, Z Wang, F Yu
Journal of Microelectronics, Electronic Components and Materials 48 (2), 115-120, 2018
22018
Retrieval of high-order susceptibilities of nonlinear metamaterials
ZY Wang, JP Qiu, H Chen, JJ Mo, FX Yu
Chinese Physics B 26 (9), 094207, 2017
22017
4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit
W Chen, Z Wang, H Chen, Z Huang, J Mo
IEICE Electronics Express 14 (18), 20170711-20170711, 2017
22017
A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs
X Xu, J Mo, W Chen, Z Wang, Y Shang, Y Wang, Q Zheng, L Wang, ...
Microelectronics Reliability 68, 30-38, 2017
22017
Numerical and experimental assessment of charge control in III–V nano-metal-oxide-semiconductor field-effect transistor
M Shi, J Saint-Martin, A Bournel, D Querlioz, P Dollfus, J Mo, N Wichmann, ...
Journal of nanoscience and nanotechnology 13 (2), 771-775, 2013
22013
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Articles 1–20