Oray Orkun Cellek
Oray Orkun Cellek
Verified email at asu.edu
Title
Cited by
Cited by
Year
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ...
Applied Physics Letters 99 (25), 251110, 2011
2672011
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
HS Kim, OO Cellek, ZY Lin, ZY He, XH Zhao, S Liu, H Li, YH Zhang
Applied Physics Letters 101 (16), 161114, 2012
1312012
Detailed investigation of electron transport, capture and gain in Al0. 3Ga0. 7As/GaAs quantum well infrared photodetectors
OO Cellek, C Besikci
Semiconductor science and technology 19 (2), 183, 2003
422003
High responsivity InP-InGaAs quantum-well infrared photodetectors: Characteristics and focal plane array performance
OO Cellek, S Ozer, C Besikci
IEEE journal of quantum electronics 41 (7), 980-985, 2005
362005
Gain and transient photoresponse of quantum well infrared photodetectors: a detailed ensemble Monte Carlo study
OO Cellek, S Memis, U Bostanci, S Ozer, C Besikci
Physica E: Low-dimensional Systems and Nanostructures 24 (3-4), 318-327, 2004
272004
Study of the valence band offsets between InAs and InAs1-xSbx alloys
EH Steenbergen, OO Cellek, D Lubyshev, Y Qiu, JM Fastenau, AWK Liu, ...
Quantum Sensing and Nanophotonic Devices IX 8268, 82680K, 2012
192012
Temperature-dependent minority carrier lifetimes of InAs/InAs [sub] 1-x [/sub] Sb [sub] x [/sub] type-II superlattices
EH Steenbergen, BC Connelly, GD Metcalfe, H Shen, M Wraback, ...
Infrared Sensors, Devices, and Applications II 8512, 85120L, 2012
172012
Multiband photodetector utilizing serially connected unipolar and bipolar devices
OO Cellek, Y Zhang
US Patent 9,184,194, 2015
162015
Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
S Liu, H Li, OO Cellek, D Ding, XM Shen, ZY Lin, EH Steenbergen, J Fan, ...
Applied Physics Letters 102 (7), 071903, 2013
142013
Virtual high dynamic range large-small pixel image sensor
D Yang, G Chen, OO Cellek, Z Fu, C Lu, D Mao, DH Tai
US Patent 9,911,773, 2018
122018
A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy
H Li, S Liu, OO Cellek, D Ding, XM Shen, EH Steenbergen, J Fan, Z Lin, ...
Journal of crystal growth 378, 145-149, 2013
122013
Assessment of large format InP/InGaAs quantum well infrared photodetector focal plane array
S Ozer, OO Cellek, C Besikci
Infrared physics & technology 47 (1-2), 115-118, 2005
122005
High dynamic range image sensor with virtual high-low sensitivity pixels
D Yang, G Chen, OO Cellek, X Wang, C Lu, D Mao, DH Tai
US Patent 9,955,090, 2018
112018
Layers for increasing performance in image sensors
C Hsiung, OO Cellek, G Chen, D Mao, V Venezia, H Tai
US Patent 9,224,881, 2015
102015
Optically addressed near and long-wave infrared multiband photodetectors
OO Cellek, JL Reno, YH Zhang
Applied Physics Letters 100 (24), 241103, 2012
92012
Optically addressed multiband photodetector for infrared imaging applications
OO Cellek, YH Zhang
Quantum Sensing and Nanophotonic Devices IX 8268, 82682N, 2012
82012
Systems and methods for detecting light-emitting diode without flickering
D Mao, T Willassen, J Solhusvik, K Mabuchi, G Chen, S Manabe, DH Tai, ...
US Patent 10,044,960, 2018
52018
InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures
OO Cellek, ZY He, ZY Lin, HS Kim, S Liu, YH Zhang
Quantum Sensing and Nanophotonic Devices X 8631, 86311I, 2013
52013
InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications
OO Cellek, H Li, XM Shen, Z Lin, EH Steenbergen, D Ding, S Liu, ...
Infrared Technology and Applications XXXVIII 8353, 83533F, 2012
52012
CMOS image sensor with dual floating diffusions per pixel for flicker-free detection of light emitting diodes
D Mao, T Willassen, J Solhusvik, K Mabuchi, G Chen, S Manabe, DH Tai, ...
US Patent 9,936,153, 2018
42018
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