|Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water|
N Krstulović, K Salamon, O Budimlija, J Kovač, J Dasović, P Umek, ...
Applied Surface Science 440, 916-925, 2018
|Dislocation-related deep levels in carbon rich p-type polycrystalline silicon|
I Capan, V Borjanović, B Pivac
Solar energy materials and solar cells 91 (10), 931-937, 2007
|Divacancy clustering in neutron-irradiated and annealed -type germanium|
K Kuitunen, F Tuomisto, J Slotte, I Capan
Physical Review B 78 (3), 033202, 2008
|Structural and charge trapping properties of two bilayer films deposited on rippled substrate|
M Buljan, J Grenzer, V Holý, N Radić, T Mišić-Radić, S Levichev, ...
Applied physics letters 97 (16), 163117, 2010
|Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation|
Ž Pastuović, E Vittone, I Capan, M Jakšić
Applied physics letters 98 (9), 092101, 2011
|Double negatively charged carbon vacancy at the h-and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study|
I Capan, T Brodar, Ž Pastuović, R Siegele, T Ohshima, S Sato, T Makino, ...
Journal of applied physics 123 (16), 161597, 2018
|Comparative studies of EFG poly-Si grown by different procedures|
B Pivac, V Borjanović, I Kovac̆ević, BN Evtody, EA Katz
Solar energy materials and solar cells 72 (1-4), 165-171, 2002
|Silicon and germanium nanocrystals: properties and characterization|
I Capan, A Carvalho, J Coutinho
Beilstein journal of nanotechnology 5 (1), 1787-1794, 2014
|Vacancy-related complexes in neutron-irradiated silicon|
I Kovačević, VP Markevich, ID Hawkins, B Pivac, AR Peaker
Journal of Physics: Condensed Matter 17 (22), S2229, 2005
|Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology|
M Mozetič, A Vesel, G Primc, C Eisenmenger-Sittner, J Bauer, A Eder, ...
Thin solid films 660, 120-160, 2018
|Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime|
Ž Pastuović, R Siegele, I Capan, T Brodar, S Sato, T Ohshima
Journal of Physics: Condensed Matter 29 (47), 475701, 2017
|Carrier storage in Ge nanoparticles produced by pulsed laser deposition|
J Martín‐Sánchez, A Chahboun, MJM Gomes, AG Rolo, B Pivac, I Capan
physica status solidi (RRL)–Rapid Research Letters 6 (5), 223-225, 2012
|Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling|
I Capan, T Brodar, J Coutinho, T Ohshima, VP Markevich, AR Peaker
Journal of Applied Physics 124 (24), 245701, 2018
|Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO: Al2O3 target in water|
N Krstulović, P Umek, K Salamon, I Capan
Materials Research Express 4 (10), 105003, 2017
|Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice|
EMF Vieira, J Martín-Sánchez, AG Rolo, A Parisini, M Buljan, I Capan, ...
Journal of Applied Physics 111 (10), 104323, 2012
|Si nanocrystals in SiO2 films analyzed by small angle X-ray scattering|
S Bernstorff, P Dubček, I Kovačević, N Radić, B Pivac
Thin Solid Films 515 (14), 5637-5640, 2007
|Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon|
Ž Pastuović, I Capan, R Siegele, R Jačimović, J Forneris, DD Cohen, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014
|Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing|
I Kovačević, B Pivac, P Dubček, H Zorc, N Radić, S Bernstorff, ...
Applied surface science 253 (6), 3034-3040, 2007
|Oxygen-related deep levels in oxygen doped EFG poly-Si|
V Borjanović, I Kovačević, B Šantić, B Pivac
Materials Science and Engineering: B 71 (1-3), 292-296, 2000
|Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC|
T Brodar, I Capan, V Radulović, L Snoj, Ž Pastuović, J Coutinho, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2018