Walter Buchwald
Walter Buchwald
Associate Professor of Engineering, University of Massachusetts Boston
Verified email at
Cited by
Cited by
Silicon waveguided components for the long-wave infrared region
RA Soref, SJ Emelett, WR Buchwald
Journal of Optics A: Pure and Applied Optics 8 (10), 840, 2006
Wideband perfect light absorber at midwave infrared using multiplexed metal structures
J Hendrickson, J Guo, B Zhang, W Buchwald, R Soref
Optics letters 37 (3), 371-373, 2012
Sub-wavelength plasmonic modes in a conductor-gap-dielectric system with a nanoscale gap
I Avrutsky, R Soref, W Buchwald
Optics Express 18 (1), 348-363, 2010
Longwave plasmonics on doped silicon and silicides
R Soref, RE Peale, W Buchwald
Optics express 16 (9), 6507-6514, 2008
Ultra-wideband source using gallium arsenide photoconductive semiconductor switches
JSH Schoenberg, JW Burger, JS Tyo, MD Abdalla, MC Skipper, ...
IEEE transactions on plasma science 25 (2), 327-334, 1997
Infrared surface plasmons on heavily doped silicon
M Shahzad, G Medhi, RE Peale, WR Buchwald, JW Cleary, R Soref, ...
Journal of Applied Physics 110 (12), 123105, 2011
IR permittivities for silicides and doped silicon
JW Cleary, RE Peale, DJ Shelton, GD Boreman, CW Smith, M Ishigami, ...
JOSA B 27 (4), 730-734, 2010
Spin-dependent Shockley-Read recombination of electrons and holes in indirect-band-gap semiconductor pn junction diodes
FC Rong, WR Buchwald, EH Poindexter, WL Warren, DJ Keeble
Solid-state electronics 34 (8), 835-841, 1991
Multi-peak electromagnetically induced transparency (EIT)-like transmission from bull’s-eye-shaped metamaterial
J Kim, R Soref, WR Buchwald
Optics express 18 (17), 17997-18002, 2010
Revised role for the Poole–Frenkel effect in deep‐level characterization
WR Buchwald, NM Johnson
Journal of applied physics 64 (2), 958-961, 1988
A high-current and high-temperature 6H-SiC thyristor
K Xie, JH Zhao, JR Flemish, T Burke, WR Buchwald, G Lorenzo, H Singh
IEEE Electron Device Letters 17 (3), 142-144, 1996
Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma
K Xie, JR Flemish, JH Zhao, WR Buchwald, L Casas
Applied physics letters 67 (3), 368-370, 1995
Si/Ge junctions formed by nanomembrane bonding
AM Kiefer, DM Paskiewicz, AM Clausen, WR Buchwald, RA Soref, ...
ACS nano 5 (2), 1179-1189, 2011
Ultrasensitive silicon photonic-crystal nanobeam electro-optical modulator: design and simulation
J Hendrickson, R Soref, J Sweet, W Buchwald
Optics express 22 (3), 3271-3283, 2014
Generation of P b Centers by High Electric Fields: Thermochemical Effects
GJ Gerardi, EH Poindexter, PJ Caplan, M Harmatz, WR Buchwald, ...
Journal Of The Electrochemical Society 136 (9), 2609, 1989
Electrically detected magnetic resonance of a transition metal related recombination center in Si pn diodes
FC Rong, GJ Gerardi, WR Buchwald, EH Poindexter, MT Umlor, ...
Applied physics letters 60 (5), 610-612, 1992
New metastable defects in GaAs
WR Buchwald, NM Johnson, LP Trombetta
Applied physics letters 50 (15), 1007-1009, 1987
Hydrogen anneal of E′ centers in thermal SiO2 on Si
Z Li, SJ Fonash, EH Poindexter, M Harmatz, F Rong, WR Buchwald
Journal of non-crystalline solids 126 (1-2), 173-176, 1990
Adjustable microchip ring trap for cold atoms and molecules
PM Baker, JA Stickney, MB Squires, JA Scoville, EJ Carlson, ...
Physical Review A 80 (6), 063615, 2009
Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor
H Saxena, RE Peale, WR Buchwald
Journal of Applied Physics 105 (11), 113101, 2009
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