Cu2ZnSnS4 Nanorods Doped with Tetrahedral, High Spin Transition Metal Ions: Mn2+, Co2+, and Ni2+ MJ Thompson, KJ Blakeney, SD Cady, MD Reichert, JD Pilar-Albaladejo, ... Chemistry of Materials 28 (6), 1668-1677, 2016 | 50 | 2016 |
Atomic layer deposition of aluminum metal films using a thermally stable aluminum hydride reducing agent KJ Blakeney, CH Winter Chemistry of Materials 30 (6), 1844-1848, 2018 | 44 | 2018 |
Axial Composition Gradients and Phase Segregation Regulate the Aspect Ratio of Cu2ZnSnS4 Nanorods MJ Thompson, TPA Ruberu, KJ Blakeney, KV Torres, PS Dilsaver, J Vela The Journal of Physical Chemistry Letters 4 (22), 3918-3923, 2013 | 43 | 2013 |
Low temperature, selective atomic layer deposition of nickel metal thin films MM Kerrigan, JP Klesko, KJ Blakeney, CH Winter ACS applied materials & interfaces 10 (16), 14200-14208, 2018 | 40 | 2018 |
Thermal atomic layer deposition of tungsten carbide films from WCl6 and AlMe3 KJ Blakeney, CH Winter Journal of Vacuum Science & Technology A 36 (1), 2018 | 18 | 2018 |
A Volatile Dialane Complex from Ring Expansion of an N-Heterocyclic Carbene and Its Use in the Thermal Atomic Layer Deposition of Aluminum Metal Films KJ Blakeney, PD Martin, CH Winter Organometallics 39 (7), 1006-1013, 2020 | 14 | 2020 |
Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films KJ Blakeney, PD Martin, CH Winter Dalton Transactions 47 (32), 10897-10905, 2018 | 10 | 2018 |
Atomic Layer Deposition of Tungsten-Rich Tungsten Carbide Films Using WCl6 and AlH2 (tBuNCH2CH2NMe2) as Precursors KJ Blakeney, CL Ward, CH Winter ECS Transactions 86 (6), 41, 2018 | 4 | 2018 |
Precursors for deposition of molybdenum-containing films KJ Blakeney US Patent 11,821,071, 2023 | 3 | 2023 |
Substantially carbon-free molybdenum-containing and tungsten-containing films in semiconductor device manufacturing KJ Blakeney, CS Lai, TM Pratt, EH Lenz, J Stevens US Patent App. 17/753,042, 2022 | 3 | 2022 |
Process for the generation of metal-containing films M Lukas, DD Schweinfurth, D Waldmann, CH Winter, K Blakeney, ... US Patent 11,505,562, 2022 | 2 | 2022 |
A volatile dialane complex from ring-expansion of an N-heterocyclic carbene and its use in atomic layer deposition of aluminum metal films K Blakeney, P Martin, C Winter | 2 | 2018 |
Precursors for deposition of molybdenum-containing films KJ Blakeney US Patent App. 18/379,397, 2024 | 1 | 2024 |
Method of forming photo-sensitive hybrid films EC Hansen, TW Weidman, C Wu, Q Lin, KJ Blakeney, A Lavoie, ... US Patent App. 18/005,595, 2023 | 1 | 2023 |
Dry deposited photoresists with organic co-reactants EC Hansen, TW Weidman, C Wu, Q Lin, KJ Blakeney US Patent App. 18/005,169, 2023 | 1 | 2023 |
Process for the generation of metal-containing films DD Schweinfurth, M Lukas, SV Klenk, S Weiguny, CH Winter, K Blakeney, ... US Patent 11,319,332, 2022 | 1 | 2022 |
Synthesis Of Volatile And Thermally Stable Aluminum Hydride Complexes And Their Use In Atomic Layer Deposition Of Metal Thin Films KJ Blakeney Wayne State University, 2018 | 1 | 2018 |
Combined self-forming barrier and seed layer by atomic layer deposition KJ Blakeney, Y Dordi US Patent App. 18/041,391, 2023 | | 2023 |
Metal oxide diffusion barriers LJ Brogan, PA Van Cleemput, MM Huie, KJ Blakeney, YH Liu US Patent App. 17/999,442, 2023 | | 2023 |
Process for the generation of metal-containing films DD Schweinfurth, M Lukas, SV Klenk, S Weiguny, CH Winter, K Blakeney, ... US Patent 11,655,262, 2023 | | 2023 |