Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature L Tong, X Huang, P Wang, L Ye, M Peng, L An, Q Sun, Y Zhang, G Yang, ... Nature communications 11 (1), 2308, 2020 | 364 | 2020 |
Recent progress on electrical and optical manipulations of perovskite photodetectors F Wang, X Zou, M Xu, H Wang, H Wang, H Guo, J Guo, P Wang, M Peng, ... Advanced Science 8 (14), 2100569, 2021 | 202 | 2021 |
Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition M Peng, R Xie, Z Wang, P Wang, F Wang, H Ge, Y Wang, F Zhong, P Wu, ... Science Advances 7 (16), eabf7358, 2021 | 164 | 2021 |
Van der Waals two-color infrared photodetector P Wu, L Ye, L Tong, P Wang, Y Wang, H Wang, H Ge, Z Wang, Y Gu, ... Light: Science & Applications 11 (1), 6, 2022 | 142 | 2022 |
A noble metal dichalcogenide for high‐performance field‐effect transistors and broadband photodetectors Z Wang, P Wang, F Wang, J Ye, T He, F Wu, M Peng, P Wu, Y Chen, ... Advanced Functional Materials 30 (5), 1907945, 2020 | 104 | 2020 |
Air‐stable low‐symmetry narrow‐bandgap 2D sulfide niobium for polarization photodetection Y Wang, P Wu, Z Wang, M Luo, F Zhong, X Ge, K Zhang, M Peng, Y Ye, ... Advanced Materials 32 (45), 2005037, 2020 | 101 | 2020 |
Controllable growth of lead-free all-inorganic perovskite nanowire array with fast and stable near-infrared photodetection M Han, J Sun, M Peng, N Han, Z Chen, D Liu, Y Guo, S Zhao, C Shan, ... The Journal of Physical Chemistry C 123 (28), 17566-17573, 2019 | 96 | 2019 |
WSe2 Photovoltaic Device Based on Intramolecular p–n Junction Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen, H Wang, M Peng, ... Small 15 (12), 1805545, 2019 | 94 | 2019 |
A versatile photodetector assisted by photovoltaic and bolometric effects W Jiang, T Zheng, B Wu, H Jiao, X Wang, Y Chen, X Zhang, M Peng, ... Light: Science & Applications 9 (1), 160, 2020 | 85 | 2020 |
Multicolor broadband and fast photodetector based on InGaAs–insulator–graphene hybrid heterostructure G Cao, F Wang, M Peng, X Shao, B Yang, W Hu, X Li, J Chen, Y Shan, ... Advanced Electronic Materials 6 (3), 1901007, 2020 | 68 | 2020 |
Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors J Sun, M Peng, Y Zhang, L Zhang, R Peng, C Miao, D Liu, M Han, R Feng, ... Nano letters 19 (9), 5920-5929, 2019 | 67 | 2019 |
Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives T Zhao, J Guo, T Li, Z Wang, M Peng, F Zhong, Y Chen, Y Yu, T Xu, R Xie, ... Chemical Society Reviews 52 (5), 1650-1671, 2023 | 61 | 2023 |
Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies F Zhong, H Wang, Z Wang, Y Wang, T He, P Wu, M Peng, H Wang, T Xu, ... Nano Research 14, 1840-1862, 2021 | 52 | 2021 |
Room-temperature blackbody-sensitive and fast infrared photodetectors based on 2D tellurium/graphene van der Waals heterojunction M Peng, Y Yu, Z Wang, X Fu, Y Gu, Y Wang, K Zhang, Z Zhang, M Huang, ... ACS Photonics 9 (5), 1775-1782, 2022 | 41 | 2022 |
Extrinsic photoconduction induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenides T He, Z Wang, R Cao, Q Li, M Peng, R Xie, Y Huang, Y Wang, J Ye, P Wu, ... Small 17 (4), 2006765, 2021 | 40 | 2021 |
Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics F Zhong, J Ye, T He, L Zhang, Z Wang, Q Li, B Han, P Wang, P Wu, Y Yu, ... Small 17 (47), 2102855, 2021 | 35 | 2021 |
High-performance MoSe2 homojunction infrared photodetector Z Wang, Y Chen, P Wu, J Ye, M Peng, Y Yan, F Zhong, T He, Y Wang, ... Infrared Physics & Technology 106, 103272, 2020 | 35 | 2020 |
Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors R Chai, Y Chen, M Zhong, H Yang, F Yan, M Peng, Y Sun, K Wang, Z Wei, ... Journal of Materials Chemistry C 8 (19), 6388-6395, 2020 | 34 | 2020 |
Ternary 2D Layered Material FePSe3 and Near‐Infrared Photodetector T Xu, M Luo, N Shen, Y Yu, Z Wang, Z Cui, J Qin, F Liang, Y Chen, Y Zhou, ... Advanced Electronic Materials 7 (8), 2100207, 2021 | 33 | 2021 |
Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode J Xu, W Zhang, M Peng, J Dai, C Chen Optics letters 43 (11), 2684-2687, 2018 | 33 | 2018 |