Dr Igor Marko
Dr Igor Marko
Verified email at surrey.ac.uk - Homepage
Cited by
Cited by
Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser
P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 242115, 2013
Carrier transport and recombination in -doped and intrinsic quantum-dot lasers
IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ...
Applied Physics Letters 87 (21), 211114, 2005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
IEEE Journal of selected topics in quantum electronics 9 (5), 1300-1307, 2003
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
Physical properties and optimization of GaBiAs/(Al) GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
IP Marko, P Ludewig, ZL Bushell, SR Jin, K Hild, Z Batool, S Reinhard, ...
Journal of Physics D: Applied Physics 47 (34), 345103, 2014
Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes
N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ...
Applied Physics Letters 100 (5), 051105, 2012
Optical gain in GaAsBi/GaAs quantum well diode lasers
IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ...
Scientific reports 6 (1), 1-10, 2016
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
IP Marko, Z Batool, K Hild, SR Jin, N Hossain, TJC Hosea, JP Petropoulos, ...
Applied Physics Letters 101 (22), 221108, 2012
Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers
IP Marko, AR Adams, SJ Sweeney, DJ Mowbray, MS Skolnick, HY Liu, ...
IEEE Journal of Selected Topics in Quantum Electronics 11 (5), 1041-1047, 2005
Temperature dependence of the gain in -doped and intrinsic quantum dot lasers
NF Masse, SJ Sweeney, IP Marko, AR Adams, N Hatori, M Sugawara
Applied physics letters 89 (19), 191118, 2006
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
IP Marko, SR Jin, K Hild, Z Batool, ZL Bushell, P Ludewig, W Stolz, K Volz, ...
Semiconductor Science and Technology 30 (9), 094008, 2015
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
IP Marko, SJ Sweeney
IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-12, 2017
Importance of Auger recombination in InAs 1.3/spl mu/m quantum dot lasers
IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel
Electronics Letters 39 (1), 58-59, 2003
Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)
AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin, MC Amann, SJ Sweeney
Scientific reports 6 (1), 1-6, 2016
The Importance of Recombination via Excited States in InAs/GaAs m Quantum-Dot Lasers
MT Crowley, IP Marko, NF Masse, AD Andreev, S Tomic, SJ Sweeney, ...
IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 799-807, 2009
Evidence of carrier leakage into the L‐valley in InAs‐based quantum cascade lasers under high hydrostatic pressure
IP Marko, AR Adams, SJ Sweeney, R Teissier, AN Baranov, S Tomić
physica status solidi (b) 246 (3), 512-515, 2009
Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes
KJ Cheetham, A Krier, IP Marko, A Aldukhayel, SJ Sweeney
Applied Physics Letters 99 (14), 141110, 2011
Temperature and pressure dependence of the recombination processes in (311)B quantum dot lasers
NF Massé, E Homeyer, IP Marko, AR Adams, SJ Sweeney, O Dehaese, ...
Applied Physics Letters 91 (13), 131113, 2007
Carrier recombination in quantum well lasers
K Hild, SJ Sweeney, S Wright, DA Lock, SR Jin, IP Marko, SR Johnson, ...
Applied Physics Letters 89 (17), 173509, 2006
Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm
GP Yablonskii, EV Lutsenko, VN Pavlovskii, IP Marko, AL Gurskii, ...
Applied Physics Letters 79 (13), 1953-1955, 2001
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