| Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 43 | 2019 |
| Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 14 | 2020 |
| Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293, 2021 | 9 | 2021 |
| A numerical investigation of heat suppression in HEMT for power electronics application L Arivazhagan, D Nirmal, PPK Reddy, J Ajayan, D Godfrey, P Prajoon, ... Silicon 13, 3039-3046, 2021 | 8 | 2021 |
| A novel ZnPc nanorod derived piezoelectric nanogenerator for energy harvesting D Godfrey, D Nirmal, L Arivazhagan, RR Kannan, PI Nelson, S Rajesh, ... Physica E: Low-dimensional Systems and Nanostructures 118, 113931, 2020 | 6 | 2020 |
| Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect L Arivazhagan, D Nirmal, J Ajayan, D Godfrey, JS Rakkumar, SB Lakshmi AIP Conference Proceedings 2201 (1), 2019 | 5 | 2019 |
| Variable thermal resistance model of GaN-on-SiC with substrate scalability L Arivazhagan, D Nirmal, S Chander, J Ajayan, D Godfrey, JS Rajkumar, ... Journal of Computational Electronics 19 (4), 1546-1554, 2020 | 3 | 2020 |
| Self-Heating Analysis of GaN-HEMT for Various Ambient Temperature and Substrate Thickness L Arivazhagan, AHM Jarndal, S Chander, D Godfrey, RK JS, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 3 | 2020 |
| Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications D Godfrey, D Nirmal, D Godwinraj, L Arivazhagan, N MohanKumar, ... Silicon, 2020 | 3 | 2020 |
| Hot carrier injection (HCI) reliability of fabricated Y-gate HEMT with various top length YL Chen, WK Yeh, KH Chen, HT Hsu, CT Hsu, DG Raj, HT Chou, JS Wu, ... ECS Journal of Solid State Science and Technology 12 (3), 035001, 2023 | 1 | 2023 |
| Strain-induced ionic polarization dependent AlGaN/GaN high electron mobility transistor D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, WK Yeh 2020 4th International Conference on Trends in Electronics and Informatics …, 2020 | 1 | 2020 |
| Enhancement of drain current in AlGaN/GaN HEMT using AlN passivation L Arivazhagan, D Nirmal, J Ajayan, D Godfrey, JS Rajkumar, SB Lakshmi AIP Conference Proceedings 2201 (1), 2019 | 1 | 2019 |
| Hot Carrier Injection Reliability of Fabricated N-and P-Type Multi FinFETs with Different TiN Stacks YL Chen, WK Yeh, HT Hsu, KH Chen, WC Lin, TH Yu, HT Chou, DG Raj, ... ECS Journal of Solid State Science and Technology 12 (3), 035007, 2023 | | 2023 |
| The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien, WC Lin, TH Yu, YS Chiu, ... Journal of Electronic Materials 52 (2), 1391-1399, 2023 | | 2023 |
| BIOWASTE DERIVED CARBON ELECTRODE SUPERCAPACITOR S R, S VASANTHKUMAR, D ARULAPPAN, D GODFREY, N DAVID IN Patent App. 202041047605 A, 2020 | | 2020 |
| Current collapse degradation on GaN high electron mobility transistor using a new derived surface trap modelling D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, N MohanKumar, ... Journal of Semiconductors 41, -1--8, 2020 | | 2020 |
| A TRIBOELECTRIC NANOGENERATOR D GODFREY, N DAVID, S RAMANATHAN, S VASANTHKUMAR IN Patent App. 202041027095 A, 2020 | | 2020 |
Dr.D.NirmalAssociate Dean Engineering and Technology, Karunya UniversityVerified email at karunya.edu
