Srinivasan Kannan
Srinivasan Kannan
Verified email at infineon.com
Title
Cited by
Cited by
Year
H2 gas sensor performance of NiO at high temperatures in gas mixtures
H Steinebach, S Kannan, L Rieth, F Solzbacher
Sensors and Actuators B: Chemical 151 (1), 162-168, 2010
1762010
NOx sensitivity of In2O3 thin film layers with and without promoter layers at high temperatures
S Kannan, L Rieth, F Solzbacher
Sensors and Actuators B: Chemical 149 (1), 8-19, 2010
412010
Selectivity, stability and repeatability of In2O3 thin films towards NOx at high temperatures (≥ 500° C)
S Kannan, H Steinebach, L Rieth, F Solzbacher
Sensors and Actuators B: Chemical 148 (1), 126-134, 2010
392010
PECVD growth of Six: Ge1− x films for high speed devices and MEMS
S Kannan, C Taylor, D Allred
Journal of non-crystalline solids 352 (9-20), 1272-1274, 2006
102006
PECVD Growth Of Six:Ge1-xFilms For High Speed Devices and MEMS
S Kannan, D Allred, PC Taylor
21st International Conference on Amorphous and Nanocrystalline …, 2005
102005
III-nitride semiconductor device with doped epi structures
J Wan, M Tungare, P Kim, SE Park, S Nelson, S Kannan
US Patent 9,608,075, 2017
22017
Semiconductor component including aluminum silicon nitride layers
S Nelson, S Kannan
US Patent 9,761,672, 2017
2017
Semiconductor component with a multi-layered nucleation body
J Wan, S Nelson, S Kannan, P Kim
US Patent 9,728,610, 2017
2017
Novel Mechanism Responsible for RDSON Shift in GaN-on-Si Power Devices
H Kim, M Tungare, S Kannan
International Conference on Nitride Semiconductors, 2017
2017
GaN-on-Si epitaxial defects – Impact on device yield and their corresponding control through Epitaxy process.
S Kannan, B guver
International Conference on Nitride Semiconductors, 2017
2017
Controllability of AlGaN/GaN Epi wafer Bow
S Park, S Kannan, J Wan, M Tungare, P Kim.
US Patent App. 15/628,723, 2017
2017
Charakterisierung eines neuen mikrostrukturierten Substrats für gassensitive, nanokristalline Metalloxide
K Kühn, S Kannan, S Bütefisch, L Rieth, F Solzbacher, A Schütze
MikroSystemTechnik, 2011
2011
Novel High Temperature Materials for In-Situ Sensing Devices
F Solzbacher, A Virkar, L Rieth, S Kannan, X Chen, H Steinebach
Univ. of Utah, Salt Lake City, UT (United States), 2009
2009
Selectivity, stability and repeatability of In2O3 NOx sensor at high temperatures (> 500 C)
S Kannan, F Solzbacher
NanoUtah 2009, Salt Lake City, Utah, 2009
2009
High Temperature Detection of Nitrogen Oxides by Indium Oxide Solid State Sensors with Gold Promoter Layers
S Kannan, L Rieth, F Solzbacher
Material Research Society (MRS) Spring Conference, 2009, 2009
2009
Effect of Au promoter layers on NOx sensitivity of Indium Oxide solid state sensors at high temperatures (> 500 ˚C)
S Kannan, M Sorenson, L Rieth, F Solzbacher
54th AVS International Symposium & Exhibition, 2007
2007
PECVD growth of SiGe layers for high speed devices and MEMS.
S Kannan, D Allred, C Taylor
APS March Meeting Abstracts, J15. 006, 2005
2005
The system can't perform the operation now. Try again later.
Articles 1–17