| —a narrow-gap ferromagnetic semiconductor T Wojtowicz, G Cywiński, WL Lim, X Liu, M Dobrowolska, JK Furdyna, ... Applied Physics Letters 82 (24), 4310-4312, 2003 | 100 | 2003 |
| Graphene epoxy-based composites as efficient electromagnetic absorbers in the extremely high-frequency band Z Barani, F Kargar, K Godziszewski, A Rehman, Y Yashchyshyn, ... ACS applied materials & interfaces 12 (25), 28635-28644, 2020 | 66 | 2020 |
| Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, H Turski, G Muziol, M Siekacz, M Sawicka, G Cywiński, ... Journal of Physics D: Applied Physics 47 (7), 073001, 2014 | 66 | 2014 |
| Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands Z Barani, F Kargar, Y Ghafouri, S Ghosh, K Godziszewski, S Baraghani, ... Advanced Materials 33 (11), 2007286, 2021 | 61 | 2021 |
| Cathodoluminescence study of diluted magnetic semiconductor quantum well/micromagnet hybrid structures J Kossut, I Yamakawa, A Nakamura, G Cywiński, K Fronc, M Czeczott, ... Applied Physics Letters 79 (12), 1789-1791, 2001 | 56 | 2001 |
| Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M Siekacz, M Sawicka, H Turski, G Cywiński, A Khachapuridze, P Perlin, ... Journal of Applied Physics 110 (6), 2011 | 54 | 2011 |
| Growth and properties of ferromagnetic In1− xMnxSb alloys T Wojtowicz, WL Lim, X Liu, G Cywiński, M Kutrowski, LV Titova, K Yee, ... Physica E: Low-Dimensional Systems and Nanostructures 20 (3-4), 325-332, 2004 | 52 | 2004 |
| 3-D-printed flat optics for THz linear scanners J Suszek, A Siemion, MS Bieda, N Błocki, D Coquillat, G Cywiński, ... IEEE transactions on Terahertz Science and Technology 5 (2), 314-316, 2015 | 49 | 2015 |
| Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy M Siekacz, A Feduniewicz-Żmuda, G Cywiński, M Kryśko, I Grzegory, ... Journal of crystal growth 310 (17), 3983-3986, 2008 | 45 | 2008 |
| Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ... Applied Physics Letters 95 (26), 2009 | 41 | 2009 |
| Contactless electroreflectance of InGaN layers with indium content≤ 36%: The surface band bending, band gap bowing, and Stokes shift issues R Kudrawiec, M Siekacz, M Kryśko, G Cywiński, J Misiewicz, ... Journal of Applied Physics 106 (11), 2009 | 38 | 2009 |
| InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE M Siekacz, MŁ Szańkowska, A Feduniewicz‐Zmuda, ... physica status solidi c 6 (S2 2), S917-S920, 2009 | 38 | 2009 |
| The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywinski, M Siekacz, ... Applied Physics Letters 98 (23), 2011 | 37 | 2011 |
| Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H Turski, M Siekacz, M Sawicka, G Cywinski, M Krysko, S Grzanka, ... Journal of Vacuum Science & Technology B 29 (3), 2011 | 36 | 2011 |
| Acceleration of the spin-lattice relaxation in diluted magnetic quantum wells in the presence of a two-dimensional electron gas AV Scherbakov, DR Yakovlev, AV Akimov, IA Merkulov, B König, W Ossau, ... Physical Review B 64 (15), 155205, 2001 | 35 | 2001 |
| Growth of thin AlInN∕ GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths G Cywiński, C Skierbiszewski, A Fedunieiwcz-Żmuda, M Siekacz, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 34 | 2006 |
| Nature of the 1/f noise in graphene—direct evidence for the mobility fluctuation mechanism A Rehman, JAD Notario, JS Sanchez, YM Meziani, G Cywiński, W Knap, ... Nanoscale 14 (19), 7242-7249, 2022 | 32 | 2022 |
| Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ... Applied Physics Letters 100 (18), 2012 | 32 | 2012 |
| AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Applied physics express 5 (2), 022104, 2012 | 32 | 2012 |
| Low frequency noise and trap density in GaN/AlGaN field effect transistors P Sai, J Jorudas, M Dub, M Sakowicz, V Jakštas, DB But, P Prystawko, ... Applied Physics Letters 115 (18), 2019 | 29 | 2019 |
