Norman Sanford
Norman Sanford
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Cited by
Handbook of Advanced Electronic and Photonic Materials and Devices
V Gopalan, NA Sanford, JA Aust, K Kitamura, Y Furukawa
Ferroelectrics and Dielectrics, 2001
Spontaneously grown GaN and AlGaN nanowires
KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov
Journal of Crystal Growth 287 (2), 522-527, 2006
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of Crystal Growth 310 (13), 3154-3158, 2008
Yb/Er-codoped and Yb-doped waveguide lasers in phosphate glass
DL Veasey, DS Funk, PM Peters, NA Sanford, GE Obarski, N Fontaine, ...
Journal of non-crystalline solids 263, 369-381, 2000
Catalyst-free growth of GaN nanowires
KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ...
Journal of electronic materials 35 (4), 576-580, 2006
Use of syngas for the upgrading of heavy crude at the wellhead
J Allison
US Patent App. 10/153,144, 2003
High- GaN nanowire resonators and oscillators
SM Tanner, JM Gray, CT Rogers, KA Bertness, NA Sanford
Applied Physics Letters 91 (20), 203117, 2007
GaN nanowires grown by molecular beam epitaxy
KA Bertness, NA Sanford, AV Davydov
IEEE Journal of selected topics in quantum electronics 17 (4), 847-858, 2010
Nucleation conditions for catalyst-free GaN nanowires
KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford
Journal of crystal growth 300 (1), 94-99, 2007
Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy
JB Schlager, KA Bertness, PT Blanchard, LH Robins, A Roshko, ...
Journal of applied physics 103 (12), 124309, 2008
Arrays of distributed-Bragg-reflector waveguide lasers at 1536 nm in Yb/Er codoped phosphate glass
DL Veasey, DS Funk, NA Sanford, JS Hayden
Applied Physics Letters 74 (6), 789-791, 1999
Steady-state and transient photoconductivity in -axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
NA Sanford, PT Blanchard, KA Bertness, L Mansfield, JB Schlager, ...
Journal of Applied Physics 107 (3), 034318, 2010
Controlled nucleation of GaN nanowires grown with molecular beam epitaxy
KA Bertness, AW Sanders, DM Rourke, TE Harvey, A Roshko, ...
Advanced functional materials 20 (17), 2911-2915, 2010
Refractive index study of films grown on sapphire substrates
NA Sanford, LH Robins, AV Davydov, A Shapiro, DV Tsvetkov, ...
Journal of applied physics 94 (5), 2980-2991, 2003
Z‐propagating waveguide lasers in rare‐earth‐doped Ti:LiNbO3
J Amin, JA Aust, NA Sanford
Applied physics letters 69 (25), 3785-3787, 1996
Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation
RA Bernal, R Agrawal, B Peng, KA Bertness, NA Sanford, AV Davydov, ...
Nano letters 11 (2), 548-555, 2011
Integrated-optic laser fabricated by field-assisted ion exchange in neodymium-doped soda-lime-silicate glass
NA Sanford, KJ Malone, DR Larson
Optics letters 15 (7), 366-368, 1990
Optical waveguides in LiTaO 3 formed by proton exchange
WB Spillman, NA Sanford, RA Soref
Optics letters 8 (9), 497-498, 1983
On-chip optical interconnects made with gallium nitride nanowires
MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ...
Nano letters 13 (2), 374-377, 2013
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ...
Journal of Applied Physics 110 (5), 053506, 2011
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