| Ultralow surface recombination of substrates passivated by plasma-assisted atomic layer deposited B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (4), 042112, 2006 | 792 | 2006 |
| Plasma-assisted atomic layer deposition: basics, opportunities, and challenges HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5 …, 2011 | 770 | 2011 |
| On the surface passivation mechanism by the negative-charge-dielectric B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels Journal of Applied Physics 104 (11), 113703, 2008 | 598 | 2008 |
| Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008 | 515 | 2008 |
| Silicon surface passivation by atomic layer deposited B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels Journal of Applied Physics 104 (4), 044903, 2008 | 513 | 2008 |
| The 2017 Plasma Roadmap: Low temperature plasma science and technology I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ... Journal of Physics D: Applied Physics 50 (32), 323001, 2017 | 462 | 2017 |
| Excellent passivation of highly doped -type Si surfaces by the negative-charge-dielectric B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 112107, 2007 | 448 | 2007 |
| High efficiency -type Si solar cells on -passivated boron emitters J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ... Applied Physics Letters 92 (25), 253504, 2008 | 427 | 2008 |
| X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films AP Dementjev, A De Graaf, MCM Van de Sanden, KI Maslakov, ... Diamond and related materials 9 (11), 1904-1907, 2000 | 392 | 2000 |
| Determining the material structure of microcrystalline silicon from Raman spectra C Smit, R Van Swaaij, H Donker, A Petit, WMM Kessels, ... Journal of applied physics 94 (5), 3582-3588, 2003 | 378 | 2003 |
| Optical constants of graphene measured by spectroscopic ellipsometry JW Weber, VE Calado, MCM Van De Sanden Applied Physics Letters 97 (9), 091904, 2010 | 352 | 2010 |
| In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van de Sanden, ... Journal of Physics D: Applied Physics 42 (7), 073001, 2009 | 326 | 2009 |
| Plasma-assisted atomic layer deposition of moisture permeation barriers on polymers E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (8), 081915, 2006 | 306 | 2006 |
| Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ... Journal of the Electrochemical Society 154 (7), G165, 2007 | 277 | 2007 |
| Vacancies and voids in hydrogenated amorphous silicon AHM Smets, WMM Kessels, MCM Van de Sanden Applied physics letters 82 (10), 1547-1549, 2003 | 274 | 2003 |
| Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD G Dingemans, MCM Van de Sanden, WMM Kessels Electrochemical and Solid State Letters 13 (3), H76, 2009 | 202 | 2009 |
| Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma HW De Vries US Patent App. 12/676,877, 2010 | 187 | 2010 |
| Hydrogen induced passivation of Si interfaces by films and stacks G Dingemans, W Beyer, MCM Van de Sanden, WMM Kessels Applied Physics Letters 97 (15), 152106, 2010 | 173 | 2010 |
| Stability of and stacks for surface passivation of crystalline silicon G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ... Journal of Applied Physics 106 (11), 114907, 2009 | 172 | 2009 |
| Plasma chemistry aspects of deposition using an expanding thermal plasma MCM Van de Sanden, RJ Severens, WMM Kessels, RFG Meulenbroeks, ... Journal of applied physics 84 (5), 2426-2435, 1998 | 168 | 1998 |
