Richard Van de Sanden
Richard Van de Sanden
director dutch institute for fundamental energy research; professor eindhoven university of
Verified email at differ.nl - Homepage
Title
Cited by
Cited by
Year
Ultralow surface recombination of substrates passivated by plasma-assisted atomic layer deposited
B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (4), 042112, 2006
7922006
Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5 …, 2011
7702011
On the surface passivation mechanism by the negative-charge-dielectric
B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (11), 113703, 2008
5982008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels
Progress in photovoltaics: research and applications 16 (6), 461-466, 2008
5152008
Silicon surface passivation by atomic layer deposited
B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (4), 044903, 2008
5132008
The 2017 Plasma Roadmap: Low temperature plasma science and technology
I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ...
Journal of Physics D: Applied Physics 50 (32), 323001, 2017
4622017
Excellent passivation of highly doped -type Si surfaces by the negative-charge-dielectric
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 112107, 2007
4482007
High efficiency -type Si solar cells on -passivated boron emitters
J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ...
Applied Physics Letters 92 (25), 253504, 2008
4272008
X-Ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon–nitrogen films
AP Dementjev, A De Graaf, MCM Van de Sanden, KI Maslakov, ...
Diamond and related materials 9 (11), 1904-1907, 2000
3922000
Determining the material structure of microcrystalline silicon from Raman spectra
C Smit, R Van Swaaij, H Donker, A Petit, WMM Kessels, ...
Journal of applied physics 94 (5), 3582-3588, 2003
3782003
Optical constants of graphene measured by spectroscopic ellipsometry
JW Weber, VE Calado, MCM Van De Sanden
Applied Physics Letters 97 (9), 091904, 2010
3522010
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van de Sanden, ...
Journal of Physics D: Applied Physics 42 (7), 073001, 2009
3262009
Plasma-assisted atomic layer deposition of moisture permeation barriers on polymers
E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (8), 081915, 2006
3062006
Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor
JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ...
Journal of the Electrochemical Society 154 (7), G165, 2007
2772007
Vacancies and voids in hydrogenated amorphous silicon
AHM Smets, WMM Kessels, MCM Van de Sanden
Applied physics letters 82 (10), 1547-1549, 2003
2742003
Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD
G Dingemans, MCM Van de Sanden, WMM Kessels
Electrochemical and Solid State Letters 13 (3), H76, 2009
2022009
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
HW De Vries
US Patent App. 12/676,877, 2010
1872010
Hydrogen induced passivation of Si interfaces by films and stacks
G Dingemans, W Beyer, MCM Van de Sanden, WMM Kessels
Applied Physics Letters 97 (15), 152106, 2010
1732010
Stability of and stacks for surface passivation of crystalline silicon
G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ...
Journal of Applied Physics 106 (11), 114907, 2009
1722009
Plasma chemistry aspects of deposition using an expanding thermal plasma
MCM Van de Sanden, RJ Severens, WMM Kessels, RFG Meulenbroeks, ...
Journal of applied physics 84 (5), 2426-2435, 1998
1681998
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