| A review of InP/InAlAs/InGaAs based transistors for high frequency applications J Ajayan, D Nirmal Superlattices and Microstructures 86, 1-19, 2015 | 88 | 2015 |
| A survey of Gallium Nitride HEMT for RF and high power applications ASA Fletcher, D Nirmal Superlattices and Microstructures, 2017 | 86 | 2017 |
| Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin AEU-International Journal of Electronics and Communications 79, 151-157, 2017 | 50 | 2017 |
| Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JC Pravin, D Nirmal, P Prajoon, J Ajayan Physica E: Low-dimensional Systems and Nanostructures 83, 95-100, 2016 | 50 | 2016 |
| Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar Microelectronics Reliability 53 (3), 499-504, 2012 | 36 | 2012 |
| InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ... AEU-International Journal of Electronics and Communications 94, 199-214, 2018 | 34 | 2018 |
| 20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications J Ajayan, D Nirmal International Journal of Electronics 104 (3), 504-512, 2017 | 33 | 2017 |
| 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications J Ajayan, D Nirmal Superlattices and Microstructures 100, 526-534, 2016 | 32 | 2016 |
| The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal Microelectronics Journal 46 (12), 1387-1391, 2015 | 32 | 2015 |
| Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects B Padmanaban, R Ramesh, D Nirmal, S Sathiyamoorthy Superlattices and Microstructures 82, 40-54, 2015 | 29 | 2015 |
| Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics D Nirmal, PV Kumar, D Joy, BK Jebalin, NM Kumar 2013 IEEE 5th International Nanoelectronics Conference (INEC), 12-19, 2013 | 29 | 2013 |
| Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 28 | 2015 |
| Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials D Nirmal, P Vijayakumar, PPC Samuel, BK Jebalin, N Mohankumar International Journal of Electronics 100 (6), 803-817, 2013 | 28 | 2013 |
| Nand gate using FinFET for nanoscale technology V Kumar, S Jabaraj Journal of Engineering Science and Technology 2 (5), 1351-1358, 2010 | 28 | 2010 |
| Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 27 | 2018 |
| 20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications J Ajayan, D Nirmal Journal of Computational Electronics 15 (4), 1291-1296, 2016 | 27 | 2016 |
| Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan AEU-International Journal of Electronics and Communications 99, 325-330, 2019 | 26 | 2019 |
| A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance JC Pravin, D Nirmal, P Prajoon, MA Menokey IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016 | 23 | 2016 |
| Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric D Nirmal, P Vijayakumar, K Shruti, N Mohankumar International Journal of Circuit Theory and Applications 41 (6), 608-618, 2013 | 20 | 2013 |
| Nanosized high κ dielectric material for FINFET D Nirmal, B Nalini, P Vijayakumar Integrated Ferroelectrics 121 (1), 31-35, 2010 | 20 | 2010 |
Dr. P. PrajoonJyothi Engineering College, Cheruthuruthy, Kerala, IndiaVerified email at jecc.ac.in
