Dr.D. NIRMAL
Dr.D. NIRMAL
Electronics and Communication Engineering, Karunya University
Verified email at karunya.edu - Homepage
Title
Cited by
Cited by
Year
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
J Ajayan, D Nirmal
Superlattices and Microstructures 86, 1-19, 2015
882015
A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal
Superlattices and Microstructures, 2017
862017
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
502017
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83, 95-100, 2016
502016
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics
D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar
Microelectronics Reliability 53 (3), 499-504, 2012
362012
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
342018
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
J Ajayan, D Nirmal
International Journal of Electronics 104 (3), 504-512, 2017
332017
20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications
J Ajayan, D Nirmal
Superlattices and Microstructures 100, 526-534, 2016
322016
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal
Microelectronics Journal 46 (12), 1387-1391, 2015
322015
Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects
B Padmanaban, R Ramesh, D Nirmal, S Sathiyamoorthy
Superlattices and Microstructures 82, 40-54, 2015
292015
Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics
D Nirmal, PV Kumar, D Joy, BK Jebalin, NM Kumar
2013 IEEE 5th International Nanoelectronics Conference (INEC), 12-19, 2013
292013
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications
BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal
Superlattices and Microstructures 78, 210-223, 2015
282015
Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials
D Nirmal, P Vijayakumar, PPC Samuel, BK Jebalin, N Mohankumar
International Journal of Electronics 100 (6), 803-817, 2013
282013
Nand gate using FinFET for nanoscale technology
V Kumar, S Jabaraj
Journal of Engineering Science and Technology 2 (5), 1351-1358, 2010
282010
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
272018
20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
J Ajayan, D Nirmal
Journal of Computational Electronics 15 (4), 1291-1296, 2016
272016
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
AEU-International Journal of Electronics and Communications 99, 325-330, 2019
262019
A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance
JC Pravin, D Nirmal, P Prajoon, MA Menokey
IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016
232016
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric
D Nirmal, P Vijayakumar, K Shruti, N Mohankumar
International Journal of Circuit Theory and Applications 41 (6), 608-618, 2013
202013
Nanosized high κ dielectric material for FINFET
D Nirmal, B Nalini, P Vijayakumar
Integrated Ferroelectrics 121 (1), 31-35, 2010
202010
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Articles 1–20