muhammad adi negara
muhammad adi negara
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Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
Electrical, structural, and chemical properties of films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 064113, 2008
Impact of H< sub> 2</sub>/N< sub> 2</sub> annealing on interface defect densities in Si (100)/SiO< sub> 2</sub>/HfO< sub> 2</sub>/TiN gate stacks
M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ...
Microelectronic engineering 80, 70-73, 2005
Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ...
ACS applied materials & interfaces 7 (23), 12774-12780, 2015
Analysis of electron mobility in gate metal-oxide-semiconductor field effect transistors: The influence of thickness, temperature, and oxide charge
MA Negara, K Cherkaoui, PK Hurley, CD Young, P Majhi, W Tsai, ...
Journal of Applied Physics 105 (2), 024510, 2009
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs
MA Negara, K Cherkaoui, P Majhi, CD Young, W Tsai, D Bauza, ...
Microelectronic Engineering 84 (9-10), 1874-1877, 2007
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ...
The Journal of chemical physics 143 (16), 164711, 2015
Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
MA Negara, M Kitano, RD Long, PC McIntyre
ACS applied materials & interfaces 8 (32), 21089-21094, 2016
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
MA Negara, D Veksler, J Huang, G Ghibaudo, PK Hurley, G Bersuker, ...
Applied Physics Letters 99 (23), 232101, 2011
The formation and characterisation of lanthanum oxide based Si/high-k/NiSi gate stacks by electron-beam evaporation: an examination of in-situ amorphous silicon capping and…
P Hurley, M Pijolat, K Cherkaoui, E O'Connor, D O'Connell, MA Negara, ...
ECS Transactions 11 (4), 145, 2007
Interface state densities, low frequency noise and electron mobility in surface channel In0. 53Ga0. 47As n-MOSFETs with a ZrO2 gate dielectric
MA Negara, N Goel, D Bauza, G Ghibaudo, PK Hurley
Microelectronic engineering 88 (7), 1095-1097, 2011
Investigation of electron mobility in surface-channel Al2O3/In0. 53Ga0. 47As MOSFETs
MA Negara, V Djara, TP O’Regan, K Cherkaoui, M Burke, YY Gomeniuk, ...
Solid-state electronics 88, 37-42, 2013
Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system
PK Hurley, R Long, T O'Regan, E O'Connor, S Monaghan, V Djara, ...
ECS Transactions 33 (3), 433, 2010
Extreme learning machine and back propagation neural network comparison for temperature and humidity control of oyster mushroom based on microcontroller
GM Fuady, AH Turoobi, MN Majdi, M Syaiin, RY Adhitya, I Rachman, ...
2017 International Symposium on Electronics and Smart Devices (ISESD), 46-50, 2017
Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks
K Tang, A Negara, T Kent, R Droopad, AC Kummel, PC McIntyre
International Conference on Indium Phosphide and Related Materials (IPRM…, 2015
Can Metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET Characteristics
K Cherkaoui, V Djara, O'Connor, J Lin, MA Negara, IM Povey, ...
ECS Transactions 45 (3), 79, 2012
Electrical properties of hfo2 films formed by ion assisted deposition
K Cherkaoui, A Negara, S McDonnell, G Hughes, M Modreanu, PK Hurley
2006 25th International Conference on Microelectronics, 351-354, 2006
Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors
V Djara, K Cherkaoui, MA Negara, PK Hurley
Journal of Applied Physics 118 (20), 204107, 2015
The influence of oxide charge on carrier mobility in HfO2/TiN gate silicon MOSFETs
PK Hurley, A Negara, T Van Hemert, K Cherkaoui
ECS transactions 19 (2), 379, 2009
Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
2008 9th International Conference on Ultimate Integration of Silicon, 107-110, 2008
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