| Unipolar barrier photodetectors based on van der Waals heterostructures Y Chen, Y Wang, Z Wang, Y Gu, Y Ye, X Chai, J Ye, Y Chen, R Xie, ... Nature Electronics 4 (5), 357-363, 2021 | 437 | 2021 |
| High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region F Wu, Q Li, P Wang, H Xia, Z Wang, Y Wang, M Luo, L Chen, F Chen, ... Nature communications 10 (1), 4663, 2019 | 274 | 2019 |
| Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition M Peng, R Xie, Z Wang, P Wang, F Wang, H Ge, Y Wang, F Zhong, P Wu, ... Science Advances 7 (16), eabf7358, 2021 | 164 | 2021 |
| Enhanced photoresponsivity of a GaAs nanowire metal-semiconductor-metal photodetector by adjusting the fermi level X Chen, D Wang, T Wang, Z Yang, X Zou, P Wang, W Luo, Q Li, L Liao, ... ACS applied materials & interfaces 11 (36), 33188-33193, 2019 | 163 | 2019 |
| Photothermal effect induced negative photoconductivity and high responsivity in flexible black phosphorus transistors J Miao, B Song, Q Li, L Cai, S Zhang, W Hu, L Dong, C Wang ACS nano 11 (6), 6048-6056, 2017 | 130 | 2017 |
| Sensing infrared photons at room temperature: from bulk materials to atomic layers P Wang, H Xia, Q Li, F Wang, L Zhang, T Li, P Martyniuk, A Rogalski, ... Small 15 (46), 1904396, 2019 | 127 | 2019 |
| Air‐stable low‐symmetry narrow‐bandgap 2D sulfide niobium for polarization photodetection Y Wang, P Wu, Z Wang, M Luo, F Zhong, X Ge, K Zhang, M Peng, Y Ye, ... Advanced Materials 32 (45), 2005037, 2020 | 101 | 2020 |
| Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection N Guo, L Xiao, F Gong, M Luo, F Wang, Y Jia, H Chang, J Liu, Q Li, Y Wu, ... Advanced Science 7 (1), 1901637, 2020 | 93 | 2020 |
| Fast uncooled mid‐wavelength infrared photodetectors with heterostructures of van der Waals on epitaxial HgCdTe Y Wang, Y Gu, A Cui, Q Li, T He, K Zhang, Z Wang, Z Li, Z Zhang, P Wu, ... Advanced Materials 34 (6), 2107772, 2022 | 88 | 2022 |
| Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions F Gong, H Fang, P Wang, M Su, Q Li, JC Ho, X Chen, W Lu, L Liao, ... Nanotechnology 28 (48), 484002, 2017 | 88 | 2017 |
| Next‐generation machine vision systems incorporating two‐dimensional materials: progress and perspectives P Wu, T He, H Zhu, Y Wang, Q Li, Z Wang, X Fu, F Wang, P Wang, C Shan, ... InfoMat 4 (1), e12275, 2022 | 84 | 2022 |
| Recent progress on advanced infrared photodetectors H Wei-Da, L Qing, C Xiao-Shuang, L Wei Acta Physica Sinica 68 (12), 2019 | 74 | 2019 |
| Vertically stacked and self-encapsulated van der Waals heterojunction diodes using two-dimensional layered semiconductors J Miao, Z Xu, Q Li, A Bowman, S Zhang, W Hu, Z Zhou, C Wang Acs Nano 11 (10), 10472-10479, 2017 | 66 | 2017 |
| Influencing sources for dark current transport and avalanche mechanisms in planar and mesa HgCdTe pin electron-avalanche photodiodes Q Li, J He, W Hu, L Chen, X Chen, W Lu IEEE Transactions on Electron Devices 65 (2), 572-576, 2018 | 56 | 2018 |
| Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing X Fu, T Li, B Cai, J Miao, GN Panin, X Ma, J Wang, X Jiang, Q Li, Y Dong, ... Light: Science & Applications 12 (1), 39, 2023 | 54 | 2023 |
| On-chip optoelectronic logic gates operating in the telecom band T He, H Ma, Z Wang, Q Li, S Liu, S Duan, T Xu, J Wang, H Wu, F Zhong, ... Nature Photonics 18 (1), 60-67, 2024 | 53 | 2024 |
| Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents J Han, M He, M Yang, Q Han, F Wang, F Zhong, M Xu, Q Li, H Zhu, ... Light: Science & Applications 9 (1), 167, 2020 | 45 | 2020 |
| Room-temperature blackbody-sensitive and fast infrared photodetectors based on 2D tellurium/graphene van der Waals heterojunction M Peng, Y Yu, Z Wang, X Fu, Y Gu, Y Wang, K Zhang, Z Zhang, M Huang, ... ACS Photonics 9 (5), 1775-1782, 2022 | 42 | 2022 |
| Extrinsic photoconduction induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenides T He, Z Wang, R Cao, Q Li, M Peng, R Xie, Y Huang, Y Wang, J Ye, P Wu, ... Small 17 (4), 2006765, 2021 | 40 | 2021 |
| Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics F Zhong, J Ye, T He, L Zhang, Z Wang, Q Li, B Han, P Wang, P Wu, Y Yu, ... Small 17 (47), 2102855, 2021 | 36 | 2021 |
Weida Hu (胡伟达)Shanghai Institute of Technical Physics, CASVerified email at mail.sitp.ac.cn
