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Johan Bergsten
Johan Bergsten
PhD
Verified email at lownoisefactory.com
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Cited by
Year
Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride
MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash
Scientific reports 4 (1), 6146, 2014
1852014
A GaN–SiC hybrid material for high-frequency and power electronics
JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ...
Applied Physics Letters 113 (4), 2018
962018
Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer
S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ...
IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015
792015
Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers
J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ...
IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018
702018
Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures
MV Kamalakar, A Dankert, J Bergsten, T Ive, SP Dash
Applied Physics Letters 105 (21), 2014
572014
Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
X Li, J Bergsten, D Nilsson, Ö Danielsson, H Pedersen, N Rorsman, ...
Applied Physics Letters 107 (26), 2015
482015
Spin transport and precession in graphene measured by nonlocal and three-terminal methods
A Dankert, MV Kamalakar, J Bergsten, SP Dash
Applied Physics Letters 104 (19), 2014
482014
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
YK Lin, J Bergsten, H Leong, A Malmros, JT Chen, DY Chen, O Kordina, ...
Semiconductor Science and Technology 33 (9), 095019, 2018
342018
Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition
T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ...
IEEE Electron Device Letters 36 (6), 537-539, 2015
322015
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
J Bergsten, A Malmros, M Tordjman, P Gamarra, C Lacam, ...
Semiconductor Science and Technology 30 (10), 105034, 2015
302015
Performance enhancement of microwave GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN interface growth process
J Bergsten, JT Chen, S Gustafsson, A Malmros, U Forsberg, M Thorsell, ...
IEEE Transactions on electron devices 63 (1), 333-338, 2015
252015
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs
A Pooth, J Bergsten, N Rorsman, H Hirshy, R Perks, P Tasker, T Martin, ...
Microelectronics Reliability 68, 2-4, 2017
182017
Small- and Large-Signal Analyses of Different Low-Pressure-Chemical-Vapor-Deposition SiNx Passivations for Microwave GaN HEMTs
T Huang, J Bergsten, M Thorsell, N Rorsman
IEEE Transactions on Electron Devices 65 (3), 908-914, 2018
122018
Impact of AlGaN/GaN interface and passivation on the robustness of low-noise amplifiers
T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman
IEEE Transactions on Electron Devices 67 (6), 2297-2303, 2020
112020
Influence of spacer thickness on the noise performance in InP HEMTs for cryogenic LNAs
J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn
IEEE Electron Device Letters 43 (7), 1029-1032, 2022
102022
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
J Bergsten, X Li, D Nilsson, Ö Danielsson, H Pedersen, E Janzén, ...
Japanese Journal of Applied Physics 55 (5S), 05FK02, 2016
102016
The similarity renormalization group for three-body interactions in one dimension
O Ĺkerlund, EJ Lindgren, J Bergsten, B Grevholm, P Lerner, R Linscott, ...
The European Physical Journal A 47, 1-7, 2011
102011
Achieving low-recovery time in algan/gan hemts with aln interlayer under low-noise amplifiers operation
T Huang, O Axelsson, J Bergsten, M Thorsell, N Rorsman
IEEE Electron Device Letters 38 (7), 926-928, 2017
82017
Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process
T Huang, C Liu, J Bergsten, H Jiang, KM Lau, N Rorsman
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
72016
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition
T Huang, H Jiang, J Bergsten, KM Lau, N Rorsman
Applied Physics Letters 113 (23), 2018
62018
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Articles 1–20