Shane R Johnson
Title
Cited by
Cited by
Year
The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis
SK O’Leary, SR Johnson, PK Lim
Journal of applied physics 82 (7), 3334-3340, 1997
3471997
Temperature dependence of the Urbach edge in GaAs
SR Johnson, T Tiedje
Journal of applied physics 78 (9), 5609-5613, 1995
1991995
Optical absorption edge of semi-insulating GaAs and InP at high temperatures
M Beaudoin, AJG DeVries, SR Johnson, H Laman, T Tiedje
Applied physics letters 70 (26), 3540-3542, 1997
1851997
Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice
M Kanskar, P Paddon, V Pacradouni, R Morin, A Busch, JF Young, ...
Applied physics letters 70 (11), 1438-1440, 1997
1751997
High Power Vcsels With Transverse Mode Control
N Samal, S Johnson, YH Zhang
US Patent App. 10/592,999, 2007
1702007
Room temperature continuous-wave operation of 1.3 μm GaAsP/GaAs/GaAsSb VCSELs grown on GaAs
S Johnson, S Chaparro, N Samal, P Dowd, SQ Yu, JB Wang, K Shiralagi, ...
2002 28TH European Conference on Optical Communication 1, 1-2, 2002
1642002
Clustering effects in Ga (AsBi)
S Imhof, A Thränhardt, A Chernikov, M Koch, NS Köster, K Kolata, ...
Applied Physics Letters 96 (13), 131115, 2010
1382010
Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
SR Johnson, C Lavoie, MK Nissen, JT Tiedje
US Patent 5,388,909, 1995
1171995
Photonic band structure of dielectric membranes periodically textured in two dimensions
V Pacradouni, WJ Mandeville, AR Cowan, P Paddon, JF Young, ...
Physical Review B 62 (7), 4204, 2000
1152000
Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy
SR Johnson, C Lavoie, T Tiedje, JA Mackenzie
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
1081993
Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
YG Sadofyev, A Ramamoorthy, B Naser, JP Bird, SR Johnson, YH Zhang
Applied physics letters 81 (10), 1833-1835, 2002
742002
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
PT Webster, NA Riordan, S Liu, EH Steenbergen, RA Synowicki, ...
Journal of Applied Physics 118 (24), 245706, 2015
612015
GaAsSb/GaAs band alignment evaluation for long-wave photonic applications
SR Johnson, CZ Guo, S Chaparro, YG Sadofyev, J Wang, Y Cao, ...
Journal of crystal growth 251 (1-4), 521-525, 2003
592003
Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications
P Dowd, SR Johnson, SA Feld, M Adamcyk, SA Chaparro, J Joseph, ...
Electronics Letters 39 (13), 987-988, 2003
582003
Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs
P Dowd, W Braun, DJ Smith, CM Ryu, CZ Guo, SL Chen, U Koelle, ...
Applied physics letters 75 (9), 1267-1269, 1999
571999
A semi-analytical model for semiconductor solar cells
D Ding, SR Johnson, SQ Yu, SN Wu, YH Zhang
Journal of Applied Physics 110 (12), 123104, 2011
562011
Band edge alignment of pseudomorphic on GaAs
JB Wang, SR Johnson, SA Chaparro, D Ding, Y Cao, YG Sadofyev, ...
Physical Review B 70 (19), 195339, 2004
542004
Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
R Leon, S Chaparro, SR Johnson, C Navarro, X Jin, YH Zhang, J Siegert, ...
Journal of applied physics 91 (9), 5826-5830, 2002
542002
Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry
B Johs, C Herzinger, JH Dinan, A Cornfeld, JD Benson, D Doctor, G Olson, ...
Thin Solid Films 313, 490-495, 1998
481998
Disorder and the Urbach edge in dilute bismide GaAsBi
C Gogineni, NA Riordan, SR Johnson, X Lu, T Tiedje
Applied Physics Letters 103 (4), 041110, 2013
472013
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Articles 1–20