| Investigation of AlGaN/GaN HEMT Breakdown analysis with Source field plate length for High power applications D Godfrey, D Nirmal, L Arivazhagan, B Roy, YL Chen, TH Yu, WK Yeh, ... 2020 5th International Conference on Devices, Circuits and Systems (ICDCS …, 2020 | 14 | 2020 |
| Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate D Godfrey, D Nirmal, L Arivazhagan, D Godwinraj, NM Kumar, Y Chen, ... Microelectronics Journal 118, 105293, 2021 | 9 | 2021 |
| Hot carrier injection (HCI) reliability of fabricated Y-gate HEMT with various top length YL Chen, WK Yeh, KH Chen, HT Hsu, CT Hsu, DG Raj, HT Chou, JS Wu, ... ECS Journal of Solid State Science and Technology 12 (3), 035001, 2023 | 1 | 2023 |
| Hot Carrier Injection Reliability of Fabricated N-and P-Type Multi FinFETs with Different TiN Stacks YL Chen, WK Yeh, HT Hsu, KH Chen, WC Lin, TH Yu, HT Chou, DG Raj, ... ECS Journal of Solid State Science and Technology 12 (3), 035007, 2023 | | 2023 |
| The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien, WC Lin, TH Yu, YS Chiu, ... Journal of Electronic Materials 52 (2), 1391-1399, 2023 | | 2023 |
| Study on interfacial trap location induced subthreshold slope degradation extracted by random telegraph noise for high-k/metal gate FinFET devices YL Yang, W Zhang, YL Chen, WK Yeh Microelectronics Reliability 111, 113728, 2020 | | 2020 |
