| Catalyst design with atomic layer deposition BJ O’Neill, DHK Jackson, J Lee, C Canlas, PC Stair, CL Marshall, ... Acs Catalysis 5 (3), 1804-1825, 2015 | 731 | 2015 |
| Long-Range Order in TS Kuan, TF Kuech, WI Wang, EL Wilkie Physical review letters 54 (3), 201, 1985 | 579 | 1985 |
| Surface chemistry of prototypical bulk II− VI and III− V semiconductors and implications for chemical sensing F Seker, K Meeker, TF Kuech, AB Ellis Chemical reviews 100 (7), 2505-2536, 2000 | 442 | 2000 |
| Determination of the interdiffusion of Al and Ga in undoped (Al, Ga) As/GaAs quantum wells TE Schlesinger, T Kuech Applied physics letters 49 (9), 519-521, 1986 | 325 | 1986 |
| Mechanism of carbon incorporation in MOCVD GaAs TF Kuech, E Veuhoff Journal of Crystal Growth 68 (1), 148-156, 1984 | 308 | 1984 |
| Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ... Journal of applied physics 62 (3), 942-947, 1987 | 246 | 1987 |
| Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ... Applied Physics Letters 94 (1), 2009 | 235 | 2009 |
| Stabilization of copper catalysts for liquid‐phase reactions by atomic layer deposition BJ O'Neill, DHK Jackson, AJ Crisci, CA Farberow, F Shi, AC Alba‐Rubio, ... Angewandte Chemie 125 (51), 14053-14057, 2013 | 233 | 2013 |
| Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets DJ Wolford, TF Kuech, JA Bradley, MA Gell, D Ninno, M Jaros Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 231 | 1986 |
| InP Layer Transfer with Masked Implantation W Chen, P Bandaru, CW Tang, KM Lau, TF Kuech, SS Lau Electrochemical and Solid-State Letters 12 (4), H149, 2009 | 229 | 2009 |
| Method of making a single crystals Ga* N article MA Tischler, TF Kuech US Patent 5,679,152, 1997 | 224 | 1997 |
| Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy TF Kuech, MA Tischler, PJ Wang, G Scilla, R Potemski, F Cardone Applied physics letters 53 (14), 1317-1319, 1988 | 211 | 1988 |
| High temperature adduct formation of trimethylgallium and ammonia A Thon, TF Kuech Applied physics letters 69 (1), 55-57, 1996 | 205 | 1996 |
| Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ... Journal of applied physics 62 (2), 632-643, 1987 | 192 | 1987 |
| surface treatments for metal contacts J Sun, KA Rickert, JM Redwing, AB Ellis, FJ Himpsel, TF Kuech Applied physics letters 76 (4), 415-417, 2000 | 179 | 2000 |
| Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x TF Kuech, DJ Wolford, R Potemski, JA Bradley, KH Kelleher, D Yan, ... Applied physics letters 51 (7), 505-507, 1987 | 176 | 1987 |
| Metal-organic vapor phase epitaxy of compound semiconductors TF Kuech Materials science reports 2 (1), 1-49, 1987 | 176 | 1987 |
| The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1− xAs layers and heterostructures TF Kuech, E Veuhoff, TS Kuan, V Deline, R Potemski journal of crystal growth 77 (1-3), 257-271, 1986 | 171 | 1986 |
| Ionic conductivity of calcia, yttria, and rare earth‐doped cerium dioxide RT Dirstine, RN Blumenthal, TF Kuech Journal of The Electrochemical Society 126 (2), 264, 1979 | 168 | 1979 |
| Application of selective epitaxy to fabrication of nanometer scale wire and dot structures JA Lebens, CS Tsai, KJ Vahala, TF Kuech Applied Physics Letters 56 (26), 2642-2644, 1990 | 164 | 1990 |
