| Observation of a many-body edge singularity in quantum-well luminescence spectra MS Skolnick, JM Rorison, KJ Nash, DJ Mowbray, PR Tapster, SJ Bass, ... Physical review letters 58 (20), 2130, 1987 | 498 | 1987 |
| 1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study JCL Yong, JM Rorison, IH White IEEE journal of quantum electronics 38 (12), 1553-1564, 2002 | 104 | 2002 |
| Optical gain in GaAsBi/GaAs quantum well diode lasers IP Marko, CA Broderick, S Jin, P Ludewig, W Stolz, K Volz, JM Rorison, ... Scientific reports 6 (1), 28863, 2016 | 77 | 2016 |
| Multi-weight unipolar codes for multimedia spectral-amplitude-coding optical CDMA systems IB Djordjevic, B Vasic, J Rorison IEEE communications letters 8 (4), 259-261, 2004 | 72 | 2004 |
| Fermi-energy-edge singularity in quantum wells containing more than one occupied subband MS Skolnick, DM Whittaker, PE Simmonds, TA Fisher, MK Saker, ... Physical Review B 43 (9), 7354, 1991 | 72 | 1991 |
| Investigations of repetition rate stability of a mode-locked quantum dot semiconductor laser in an auxiliary optical fiber cavity S Breuer, W ElsaBer, JG McInerney, K Yvind, J Pozo, EAJM Bente, ... IEEE Journal of Quantum Electronics 46 (2), 150-157, 2009 | 62 | 2009 |
| Excitons in type-II quantum-dot systems: A comparison of the GaAs/AlAs and InAs/GaSb systems JM Rorison Physical Review B 48 (7), 4643, 1993 | 53 | 1993 |
| Focused ion beam-based fabrication of nanostructured photonic devices MJ Cryan, M Hill, DC Sanz, PS Ivanov, PJ Heard, L Tian, S Yu, ... IEEE Journal of Selected Topics in Quantum Electronics 11 (6), 1266-1277, 2005 | 49 | 2005 |
| Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-/spl mu/m AlGaInAs MQW lasers TJ Houle, JCL Yong, CM Marinelli, S Yu, JM Rorison, IH White, JK White, ... IEEE journal of quantum electronics 41 (2), 132-139, 2005 | 48 | 2005 |
| Design of multiweight unipolar codes for multimedia optical CDMA applications based on pairwise balanced designs IB Djordjevic, B Vasic, J Rorison Journal of Lightwave Technology 21 (9), 1850-1856, 2003 | 48 | 2003 |
| Theoretical modeling of nonequilibrium optical phonons and electron energy relaxation in GaN CY Tsai, CH Chen, TL Sung, CY Tsai, JM Rorison Journal of applied physics 85 (3), 1475-1480, 1999 | 41 | 1999 |
| Growth of ZnSe/MgS strained‐layer superlattices by molecular beam epitaxy N Teraguchi, H Mouri, Y Tomomura, A Suzuki, H Taniguchi, J Rorison, ... Applied physics letters 67 (20), 2945-2947, 1995 | 40 | 1995 |
| Subcarrier modulated transmission of 2.5 Gb/s over 300 m of 62.5-μm-core diameter multimode fiber EJ Tyler, M Webster, RV Penty, IH White, S Yu, J Rorison IEEE Photonics Technology Letters 14 (12), 1743-1745, 2002 | 39 | 2002 |
| Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy HD Sun, MD Dawson, M Othman, JCL Yong, JM Rorison, P Gilet, ... Applied physics letters 82 (3), 376-378, 2003 | 35 | 2003 |
| Dual-purpose VCSELs for short-haul bidirectional communication links M Dragas, IH White, RV Penty, J Rorison, PJ Heard, G Parry IEEE Photonics Technology Letters 11 (12), 1548-1550, 1999 | 35 | 1999 |
| GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics CA Broderick, S Jin, IP Marko, K Hild, P Ludewig, ZL Bushell, W Stolz, ... Scientific reports 7 (1), 46371, 2017 | 33 | 2017 |
| Optical characteristics of 1.55 μm GaInNAs multiple quantum wells HD Sun, AH Clark, HY Liu, M Hopkinson, S Calvez, MD Dawson, YN Qiu, ... Applied physics letters 85 (18), 4013-4015, 2004 | 33 | 2004 |
| Calculation of losses in 2-D photonic crystal membrane waveguides using the 3-D FDTD method MJ Cryan, DCL Wong, IJ Craddock, S Yu, J Rorison, CJ Railton IEEE photonics technology letters 17 (1), 58-60, 2004 | 31 | 2004 |
| Many-body effects in optical spectra of n-doped alloy semiconductor quantum-well structures JM Rorison Journal of Physics C: Solid State Physics 20 (15), L311, 1987 | 31 | 1987 |
| Electron-electron interaction in semiconductors with application to hot-electron transistors in silicon and gallium arsenide JM Rorison, DC Herbert Journal of Physics C: Solid State Physics 19 (21), 3991, 1986 | 30 | 1986 |
