Electrolyte‐Gated Transistors for Organic and Printed Electronics SH Kim, K Hong, W Xie, KH Lee, S Zhang, TP Lodge, CD Frisbie Advanced Materials 25 (13), 1822-1846, 2012 | 1035 | 2012 |
Rubrene-Based Single-Crystal Organic Semiconductors: Synthesis, Electronic Structure, and Charge-Transport Properties KA McGarry, W Xie, C Sutton, C Risko, Y Wu, VG Young Jr, JL Brédas, ... Chemistry of Materials 25 (11), 2254–2263, 2013 | 182 | 2013 |
Temperature‐Independent Transport in High‐Mobility Dinaphtho‐Thieno‐Thiophene (DNTT) Single Crystal Transistors W Xie, K Willa, Y Wu, R Häusermann, K Takimiya, B Batlogg, CD Frisbie Advanced Materials 25 (25), 3478-3484, 2013 | 153 | 2013 |
Aerosol Jet Printed, Sub‐2 V Complementary Circuits Constructed from P‐and N‐Type Electrolyte Gated Transistors K Hong, YH Kim, SH Kim, W Xie, WD Xu, CH Kim, CD Frisbie Advanced Materials 26 (41), 7032-7037, 2014 | 121 | 2014 |
Ultralow contact resistance in electrolyte-gated organic thin film transistors D Braga, M Ha, W Xie, CD Frisbie Applied Physics Letters 97 (19), 2010 | 120 | 2010 |
Single ion conducting, polymerized ionic liquid triblock copolymer films: high capacitance electrolyte gates for n-type transistors JH Choi, W Xie, Y Gu, CD Frisbie, TP Lodge ACS Applied Materials & Interfaces 7 (13), 7294-7302, 2015 | 112 | 2015 |
High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28 W Xie, KA McGarry, F Liu, Y Wu, P Ruden, CJ Douglas, CD Frisbie The Journal of Physical Chemistry C 117 (22), 11522– 11529, 2013 | 111 | 2013 |
Organic Electrical Double Layer Transistors Based on Rubrene Single Crystals: Examining Transport at High Surface Charge Densities above 1013 cm–2 W Xie, CD Frisbie The Journal of Physical Chemistry C 115 (29), 14360–14368, 2011 | 108 | 2011 |
Carrier localization on surfaces of organic semiconductors gated with electrolytes Y Xia, W Xie, PP Ruden, CD Frisbie Physical review letters 105 (3), 036802, 2010 | 94 | 2010 |
Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating HT Yi, B Gao, W Xie, SW Cheong, V Podzorov Scientific reports 4, 6604, 2014 | 64 | 2014 |
Utilizing Carbon Nanotube Electrodes to Improve Charge Injection and Transport in Bis (trifluoromethyl)-Dimethyl-Rubrene (fm-rubrene) Ambipolar Single Crystal Transistors W Xie, PL Prabhumirashi, Y Nakayama, KA McGarry, ML Geier, ... ACS nano 7 (11), 10245-10256, 2013 | 63 | 2013 |
2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors. W Xie, X Zhang, C Leighton, CD Frisbie Advanced Electronic Materials 3 (3), 2017 | 57 | 2017 |
High conductance 2D transport around the hall mobility peak in electrolyte-gated rubrene crystals W Xie, S Wang, X Zhang, C Leighton, CD Frisbie Physical review letters 113 (24), 246602, 2014 | 55 | 2014 |
Carrier Transport in Films of Alkyl Ligand-terminated Silicon Nanocrystals T Chen, B Skinner, W Xie, B Shklovskii, UR Kortshagen The Journal of Physical Chemistry C 118 (34), 19580–19588, 2014 | 44 | 2014 |
Electrolyte gated single-crystal organic transistors to examine transport in the high carrier density regime W Xie, CD Frisbie MRS Bulletin 38 (01), 43-50, 2013 | 39 | 2013 |
Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal J Dacuņa, W Xie, A Salleo Physical Review B—Condensed Matter and Materials Physics 86 (11), 115202, 2012 | 39 | 2012 |
High Capacitance, Photo-Patternable Ion Gel Gate Insulators Compatible with Vapor Deposition of Metal Gate Electrodes JH Choi, Y Gu, K Hong, W Xie, CD Frisbie, TP Lodge ACS applied materials & interfaces 6 (21), 19275–19281, 2014 | 38 | 2014 |
Charge Density Dependent Two‐Channel Conduction in Organic Electric Double Layer Transistors (EDLTs) W Xie, F Liu, S Shi, PP Ruden, CD Frisbie Advanced Materials 26 (16), 2527-2532, 2014 | 33 | 2014 |
Wettability contrast gravure printing H Zhang, A Ramm, S Lim, W Xie, BY Ahn, WC Xu, A Mahajan, ... Advanced Materials 27 (45), 7420-7425, 2015 | 29 | 2015 |
Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors F Liu, W Xie, S Shi, C Daniel Frisbie, P Paul Ruden Applied Physics Letters 103 (19), 2013 | 17 | 2013 |