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Joe Margetis, PhD
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Methods of forming highly p-type doped germanium tin films and structures and devices including the films
J Margetis, J Tolle
US Patent 9,647,114, 2017
2022017
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
2012016
Radial and thickness control via biased multi-port injection settings
J Margetis, J Tolle, G Bartlett, N Bhargava
US Patent 9,892,913, 2018
1872018
Formation of epitaxial layers via dislocation filtering
J Margetis, J Tolle
US Patent 10,388,509, 2019
1862019
Methods of forming silicon germanium tin films and structures and devices including the films
J Margetis, J Tolle
US Patent 9,905,420, 2018
1852018
Process for forming a film on a substrate using multi-port injection assemblies
J Margetis, J Tolle, G Bartlett, N Bhargava
US Patent 10,262,859, 2019
1842019
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
1812014
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1422017
Methods for forming a silicon germanium tin layer and related semiconductor device structures
N Bhargava, J Margetis, J Tolle
US Patent 10,685,834, 2020
1342020
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne
US Patent 10,446,393, 2019
1342019
Method for depositing a group IV semiconductor and related semiconductor device structures
J Tolle, J Margetis
US Patent 10,541,333, 2020
1332020
Method for depositing a group iv semiconductor and related semiconductor device structures
J Margetis, J Tolle
US Patent App. 16/000,125, 2019
1332019
Single-crystal II-VI on Si single-junction and tandem solar cells
M Carmody, S Mallick, J Margetis, R Kodama, T Biegala, D Xu, ...
Applied physics letters 96 (15), 153502, 2010
1082010
Temperature-controlled flange and reactor system including same
S Sreeram, J Tolle, J Margetis, J Su
US Patent 10,612,136, 2020
1072020
Systematic study of Si-based GeSn photodiodes with 2.6 Ám detector cutoff for short-wave infrared detection
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
1072016
Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
1002016
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
912014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
862014
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 1-11, 2018
822018
Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
802014
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