| Methods of forming highly p-type doped germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,647,114, 2017 | 373 | 2017 |
| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 9,892,913, 2018 | 358 | 2018 |
| Methods of forming silicon germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,905,420, 2018 | 357 | 2018 |
| Formation of epitaxial layers via dislocation filtering J Margetis, J Tolle US Patent 10,388,509, 2019 | 356 | 2019 |
| Process for forming a film on a substrate using multi-port injection assemblies J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 10,262,859, 2019 | 356 | 2019 |
| Methods for forming a silicon germanium tin layer and related semiconductor device structures N Bhargava, J Margetis, J Tolle US Patent 10,685,834, 2020 | 308 | 2020 |
| Methods for forming silicon-containing epitaxial layers and related semiconductor device structures N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne US Patent 10,446,393, 2019 | 307 | 2019 |
| Method for depositing a group IV semiconductor and related semiconductor device structures J Margetis, J Tolle US Patent 11,374,112, 2022 | 304 | 2022 |
| Method for depositing a group IV semiconductor and related semiconductor device structures J Tolle, J Margetis US Patent 10,541,333, 2020 | 304 | 2020 |
| Temperature-controlled flange and reactor system including same S Sreeram, J Tolle, J Margetis, J Su US Patent 10,612,136, 2020 | 278 | 2020 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 239 | 2016 |
| Temperature-controlled flange and reactor system including same S Sreeram, J Tolle, J Margetis, J Su US Patent 11,168,395, 2021 | 229 | 2021 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 217 | 2014 |
| Method for cleaning quartz epitaxial chambers G Deye, JP Margetis, J Tolle US Patent App. 16/888,423, 2020 | 215 | 2020 |
| Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation J Tolle, J Margetis, D Kohen US Patent 11,557,474, 2023 | 214 | 2023 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 191 | 2017 |
| Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods A Kajbafvala, J Margetis, X Sun, D Kohen, D Pierreux US Patent App. 17/141,360, 2021 | 172 | 2021 |
| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 165 | 2020 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 162 | 2019 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 141 | 2016 |
