| Methods of forming highly p-type doped germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,647,114, 2017 | 202 | 2017 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 171105, 2016 | 201 | 2016 |
| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 9,892,913, 2018 | 187 | 2018 |
| Formation of epitaxial layers via dislocation filtering J Margetis, J Tolle US Patent 10,388,509, 2019 | 186 | 2019 |
| Methods of forming silicon germanium tin films and structures and devices including the films J Margetis, J Tolle US Patent 9,905,420, 2018 | 185 | 2018 |
| Process for forming a film on a substrate using multi-port injection assemblies J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 10,262,859, 2019 | 184 | 2019 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 151109, 2014 | 181 | 2014 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 142 | 2017 |
| Methods for forming a silicon germanium tin layer and related semiconductor device structures N Bhargava, J Margetis, J Tolle US Patent 10,685,834, 2020 | 134 | 2020 |
| Methods for forming silicon-containing epitaxial layers and related semiconductor device structures N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne US Patent 10,446,393, 2019 | 134 | 2019 |
| Method for depositing a group IV semiconductor and related semiconductor device structures J Tolle, J Margetis US Patent 10,541,333, 2020 | 133 | 2020 |
| Method for depositing a group iv semiconductor and related semiconductor device structures J Margetis, J Tolle US Patent App. 16/000,125, 2019 | 133 | 2019 |
| Single-crystal II-VI on Si single-junction and tandem solar cells M Carmody, S Mallick, J Margetis, R Kodama, T Biegala, D Xu, ... Applied physics letters 96 (15), 153502, 2010 | 108 | 2010 |
| Temperature-controlled flange and reactor system including same S Sreeram, J Tolle, J Margetis, J Su US Patent 10,612,136, 2020 | 107 | 2020 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 107 | 2016 |
| Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 103106, 2016 | 100 | 2016 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 241110, 2014 | 91 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 86 | 2014 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 1-11, 2018 | 82 | 2018 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014 | 80 | 2014 |
