John Dallesasse
John Dallesasse
Professor of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
Verified email at illinois.edu
Title
Cited by
Cited by
Year
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
JM Dallesasse, N Holonyak Jr, AR Sugg, TA Richard, N El‐Zein
Applied Physics Letters 57 (26), 2844-2846, 1990
7321990
Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers
JM Dallesasse, N Holonyak Jr
Applied Physics Letters 58 (4), 394-396, 1991
1481991
Optical transceiver for 40 gigabit/second transmission
J Dallesasse
US Patent 7,941,053, 2011
1182011
Method and system for hybrid integration of an opto-electronic integrated circuit
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,368,995, 2013
1172013
Native oxide stabilization of AlAs‐GaAs heterostructures
AR Sugg, N Holonyak Jr, JE Baker, FA Kish, JM Dallesasse
Applied physics letters 58 (11), 1199-1201, 1991
1141991
AlGaAs native oxide
N Holonyak Jr, JM Dallesasse
US Patent 5,262,360, 1993
1111993
Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers
FA Kish, SJ Caracci, N Holonyak Jr, JM Dallesasse, KC Hsieh, MJ Ries
Applied physics letters 59 (14), 1755-1757, 1991
1031991
Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures
JM Dallesasse, N El‐Zein, N Holonyak Jr, KC Hsieh, RD Burnham, ...
Journal of applied physics 68 (5), 2235-2238, 1990
841990
Integrated tunable CMOS laser
T Creazzo, E Marchena, SB Krasulick, KL Paul, D Van Orden, JY Spann, ...
Optics express 21 (23), 28048-28053, 2013
802013
Properties and use of ln 0.5 (Al x Ga 1-x) 0.5 P and Al x Ga 1-x as native oxides in heterostructure lasers
FA Kish, J Caracci, N Holonyak, KC Hsieh, JE Baker, SA Maranowski, ...
Journal of electronic materials 21 (12), 1133-1139, 1992
801992
Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures
JM Dallesasse, P Gavrilovic, N Holonyak Jr, RW Kaliski, DW Nam, ...
Applied physics letters 56 (24), 2436-2438, 1990
711990
Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
DG Deppe, N Holonyak Jr, WE Plano, VM Robbins, JM Dallesasse, ...
Journal of applied physics 64 (4), 1838-1844, 1988
691988
Semiconductor devices with native aluminum oxide regions
N Holonyak Jr, JM Dallesasse
US Patent 5,373,522, 1994
641994
Method for making aluminum gallium arsenide semiconductor device with native oxide layer
N Holonyak Jr, JM Dallesasse
US Patent 5,696,023, 1997
591997
Method and system for hybrid integration of a tunable laser
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,615,025, 2013
582013
Method and system for heterogeneous substrate bonding of waveguide receivers
SB Krasulick, J Dallesasse
US Patent 8,611,388, 2013
582013
Method and system for template assisted wafer bonding
J Dallesasse, SB Krasulick
US Patent 8,222,084, 2012
582012
6-Aryl-4-aminopicolinates and their use as herbicides
TW Balko, AM Buysse, JB Epp, SC Fields, CT Lowe, RJ Keese, ...
US Patent 6,784,137, 2004
582004
Optical transceiver for 100 gigabit/second transmission
J Dallesasse
US Patent 7,380,993, 2008
542008
Method and system of heterogeneous substrate bonding for photonic integration
SB Krasulick, J Dallesasse
US Patent 8,630,326, 2014
522014
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