| Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices JM Dallesasse, N Holonyak Jr, AR Sugg, TA Richard, N El‐Zein Applied Physics Letters 57 (26), 2844-2846, 1990 | 786 | 1990 |
| Method and system for heterogeneous substrate bonding of waveguide receivers SB Krasulick, J Dallesasse US Patent 8,611,388, 2013 | 172 | 2013 |
| Method and system of heterogeneous substrate bonding for photonic integration SB Krasulick, J Dallesasse US Patent 8,630,326, 2014 | 164 | 2014 |
| Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers JM Dallesasse, N Holonyak Jr Applied Physics Letters 58 (4), 394-396, 1991 | 153 | 1991 |
| Method and system for hybrid integration of an opto-electronic integrated circuit J Dallesasse, SB Krasulick, W Kozlovsky US Patent 8,368,995, 2013 | 139 | 2013 |
| Optical transceiver for 40 gigabit/second transmission J Dallesasse US Patent 7,941,053, 2011 | 136 | 2011 |
| Native oxide stabilization of AlAs‐GaAs heterostructures AR Sugg, N Holonyak Jr, JE Baker, FA Kish, JM Dallesasse Applied physics letters 58 (11), 1199-1201, 1991 | 122 | 1991 |
| AlGaAs native oxide N Holonyak Jr, JM Dallesasse US Patent 5,262,360, 1993 | 112 | 1993 |
| Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers FA Kish, SJ Caracci, N Holonyak Jr, JM Dallesasse, KC Hsieh, MJ Ries Applied physics letters 59 (14), 1755-1757, 1991 | 107 | 1991 |
| Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures JM Dallesasse, N El‐Zein, N Holonyak Jr, KC Hsieh, RD Burnham, ... Journal of applied physics 68 (5), 2235-2238, 1990 | 96 | 1990 |
| Integrated tunable CMOS laser T Creazzo, E Marchena, SB Krasulick, KL Paul, D Van Orden, JY Spann, ... Optics express 21 (23), 28048-28053, 2013 | 93 | 2013 |
| Method and system for template assisted wafer bonding J Dallesasse, SB Krasulick US Patent 8,222,084, 2012 | 83 | 2012 |
| Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers FA Kish, J Caracci, N Holonyak, KC Hsieh, JE Baker, SA Maranowski, ... Journal of electronic materials 21, 1133-1139, 1992 | 79 | 1992 |
| Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures JM Dallesasse, P Gavrilovic, N Holonyak Jr, RW Kaliski, DW Nam, ... Applied physics letters 56 (24), 2436-2438, 1990 | 79 | 1990 |
| Method and system for hybrid integration of a tunable laser J Dallesasse, SB Krasulick, W Kozlovsky US Patent 8,615,025, 2013 | 73 | 2013 |
| Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures DG Deppe, N Holonyak Jr, WE Plano, VM Robbins, JM Dallesasse, ... Journal of applied physics 64 (4), 1838-1844, 1988 | 70 | 1988 |
| Semiconductor devices with native aluminum oxide regions N Holonyak Jr, JM Dallesasse US Patent 5,373,522, 1994 | 65 | 1994 |
| Optical transceiver for 100 gigabit/second transmission J Dallesasse US Patent 7,380,993, 2008 | 60 | 2008 |
| Method for making aluminum gallium arsenide semiconductor device with native oxide layer N Holonyak Jr, JM Dallesasse US Patent 5,696,023, 1997 | 59 | 1997 |
| Method and system for hybrid integration of a tunable laser and a phase modulator J Dallesasse, SB Krasulick, W Kozlovsky US Patent 8,559,470, 2013 | 57 | 2013 |
