Daniel Koleske
Daniel Koleske
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Trapping effects and microwave power performance in AlGaN/GaN HEMTs
SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ...
IEEE Transactions on Electron Devices 48 (3), 465-471, 2001
Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well
M Achermann, MA Petruska, S Kos, DL Smith, DD Koleske, VI Klimov
Nature 429 (6992), 642-646, 2004
Effect of dislocation density on efficiency droop in light-emitting diodes
MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ...
Applied Physics Letters 91 (23), 231114, 2007
Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers
AH Mueller, MA Petruska, M Achermann, DJ Werder, EA Akhadov, ...
Nano Letters 5 (6), 1039-1044, 2005
Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
PB Klein, SC Binari, K Ikossi, AE Wickenden, DD Koleske, RL Henry
Applied Physics Letters 79 (21), 3527-3529, 2001
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ...
Applied Physics Letters 94 (11), 111109, 2009
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
Toward smart and ultra‐efficient solid‐state lighting
JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
DD Koleske, AE Wickenden, RL Henry, ME Twigg
Journal of crystal growth 242 (1-2), 55-69, 2002
Nanocrystal-based light-emitting diodes utilizing high-efficiency nonradiative energy transfer for color conversion
M Achermann, MA Petruska, DD Koleske, MH Crawford, VI Klimov
Nano letters 6 (7), 1396-1400, 2006
GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg
Journal of crystal growth 223 (4), 466-483, 2001
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
Q Dai, Q Shan, J Wang, S Chhajed, J Cho, EF Schubert, MH Crawford, ...
Applied Physics Letters 97 (13), 133507, 2010
Growth model for GaN with comparison to structural, optical, and electrical properties
DD Koleske, AE Wickenden, RL Henry, WJ DeSisto, RJ Gorman
Journal of Applied Physics 84 (4), 1998-2010, 1998
Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys
AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Q Li, KR Westlake, MH Crawford, SR Lee, DD Koleske, JJ Figiel, ...
Optics express 19 (25), 25528-25534, 2011
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
D Zhu, J Xu, AN Noemaun, JK Kim, EF Schubert, MH Crawford, ...
Applied Physics Letters 94 (8), 081113, 2009
The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
VM Bermudez, DD Koleske, AE Wickenden
Applied surface science 126 (1-2), 69-82, 1998
Atomic H abstraction of surface H on Si: An Eley–Rideal mechanism?
DD Koleske, SM Gates, B Jackson
The Journal of chemical physics 101 (4), 3301-3309, 1994
Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ...
Applied Physics Letters 81 (11), 1940-1942, 2002
Resistivity control in unintentionally doped GaN films grown by MOCVD
AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi
Journal of crystal growth 260 (1-2), 54-62, 2004
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