Katsuhiko Nishiguchi
Katsuhiko Nishiguchi
NTT Basic Research Laboratories
Verified email at lab.ntt.co.jp - Homepage
Title
Cited by
Cited by
Year
Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara, K Nishiguchi, Y Ono
Applied Physics Letters 92 (4), 042102, 2008
2002008
Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities
T Tanabe, K Nishiguchi, A Shinya, E Kuramochi, H Inokawa, M Notomi, ...
Applied Physics Letters 90 (3), 031115, 2007
1732007
Interconnect-free parallel logic circuits in a single mechanical resonator
I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi
Nature communications 2 (1), 1-7, 2011
1562011
Manipulation and detection of single electrons for future information processing
Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi
Journal of Applied Physics 97 (3), 2, 2005
1532005
Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique
K Nishiguchi, X Zhao, S Oda
Journal of applied physics 92 (5), 2748-2757, 2002
1322002
Phonon lasing in an electromechanical resonator
I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi
Physical review letters 110 (12), 127202, 2013
1292013
Low power and fast electro-optic silicon modulator with lateral pin embedded photonic crystal nanocavity
T Tanabe, K Nishiguchi, E Kuramochi, M Notomi
Optics express 17 (25), 22505-22513, 2009
1282009
Phonon-cavity electromechanics
I Mahboob, K Nishiguchi, H Okamoto, H Yamaguchi
Nature Physics 8 (5), 387-392, 2012
1192012
Conductance modulation by individual acceptors in Si nanoscale field-effect transistors
Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi
Applied Physics Letters 90 (10), 102106, 2007
1182007
A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity
N Clément, K Nishiguchi, JF Dufrêche, D Guerin, A Fujiwara, D Vuillaume
Applied Physics Letters 98 (1), 014104, 2011
882011
Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology
K Nishiguchi, A Fujiwara, Y Ono, H Inokawa, Y Takahashi
Applied physics letters 88 (18), 183101, 2006
802006
Gigahertz single-trap electron pumps in silicon
G Yamahata, K Nishiguchi, A Fujiwara
Nature communications 5 (1), 1-7, 2014
712014
One-by-one trap activation in silicon nanowire transistors
N Clément, K Nishiguchi, A Fujiwara, D Vuillaume
Nature communications 1 (1), 1-8, 2010
712010
Silicon nanoelectronics
S Oda, D Ferry
CRC press, 2017
692017
A multimode electromechanical parametric resonator array
I Mahboob, M Mounaix, K Nishiguchi, A Fujiwara, H Yamaguchi
Scientific reports 4 (1), 1-8, 2014
622014
Electron transport in a single silicon quantum structure using a vertical silicon probe
K Nishiguchi, S Oda
Journal of Applied Physics 88 (7), 4186-4190, 2000
552000
Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy
A Shakoor, K Nozaki, E Kuramochi, K Nishiguchi, A Shinya, M Notomi
Optics express 22 (23), 28623-28634, 2014
532014
Power generator driven by Maxwell’s demon
K Chida, S Desai, K Nishiguchi, A Fujiwara
Nature communications 8 (1), 1-7, 2017
462017
Identification of single and coupled acceptors in silicon nano-field-effect transistors
MAH Khalafalla, Y Ono, K Nishiguchi, A Fujiwara
Applied Physics Letters 91 (26), 263513, 2007
452007
Si nanowire ion-sensitive field-effect transistors with a shared floating gate
K Nishiguchi, N Clement, T Yamaguchi, A Fujiwara
Applied Physics Letters 94 (16), 163106, 2009
442009
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Articles 1–20